EUV patterning improvement toward high-volume manufacturing

Yuhei Kuwahara; Koichi Matsunaga; Shinichiro Kawakami; Kathleen Nafus; Philippe Foubert; Anne-Marie Goethals

doi:10.1117/12.2086080

19 March 2015 EUV patterning improvement toward high-volume manufacturing

Yuhei Kuwahara, Koichi Matsunaga, Shinichiro Kawakami, Kathleen Nafus, Philippe Foubert, Anne-Marie Goethals

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94221X (2015) https://doi.org/10.1117/12.2086080
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Extreme ultraviolet lithography (EUVL) technology is a promising candidate for a semiconductor process for 18nm half pitch and beyond. So far, the studies of EUV for manufacturability have been focused on particular aspects. It still requires fine resolution, uniform and smooth patterns, and low defectivity, not only after lithography but also after the etch process. Tokyo Electron Limited and imec are continuously collaborating to improve manufacturing quality of the process of record (POR) on a CLEAN TRACK^TM LITHIUS Pro^TMZ-EUV. This next generation coating/developing system has been upgraded with defectivity reduction enhancements which are applied along with TEL^TM best known methods. We have evaluated process defectivity post lithography and post etch. Apart from defectivity, FIRM^TM rinse material and application compatibility with sub 18nm patterning is improved to prevent line pattern collapse and increase process window on next generation resist materials. This paper reports on the progress of defectivity and patterning performance optimization towards the NXE:3300 POR.

Citation Download Citation

Yuhei Kuwahara, Koichi Matsunaga, Shinichiro Kawakami, Kathleen Nafus, Philippe Foubert, and Anne-Marie Goethals "EUV patterning improvement toward high-volume manufacturing", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221X (19 March 2015); https://doi.org/10.1117/12.2086080

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available