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10 March 2020 Hydrogen density-of-states in β-Ga2O3 (Conference Presentation)
Norbert H. Nickel, Encarnacion G. G. Villora, Kiyoshi Shimamura, Jörg Rappich
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Proceedings Volume 11281, Oxide-based Materials and Devices XI; 1128103 (2020) https://doi.org/10.1117/12.2543778
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
In this paper, we present an experimental study of hydrogen (H) and deuterium (D) in single crystal and polycrystalline b-Ga2O3. H or D was introduced into the specimens using ampoule passivation at elevated temperatures. The samples were characterized with infrared absorption and gas effusion measurements. As-grown single crystal b-Ga2O3 contains a residual H concentration of about 1019 cm-3 and exhibits a local vibrational mode at 3437.6 cm-1 that has been attributed to O – H. Polycrystalline b-Ga2O3 thin-films were grown by pulsed laser deposition. Hydrogen effusion measurements show that these samples contain H concentrations of up to about 1020 cm-3. From the hydrogen effusion spectra, the H chemical potential was determined as a function of the H concentration, which can be related to the H density-of-states distribution.
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Norbert H. Nickel, Encarnacion G. G. Villora, Kiyoshi Shimamura, and Jörg Rappich "Hydrogen density-of-states in β-Ga2O3 (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 1128103 (10 March 2020); https://doi.org/10.1117/12.2543778
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KEYWORDS
Hydrogen
Crystals
Crystallography
Electronics
Gallium
Infrared radiation
Muons
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