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16 March 2023 Hydrogen diffusion on β-Ga2O3 (Conference Presentation)
Norbert H. Nickel, K. Geilert
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Proceedings Volume PC12422, Oxide-based Materials and Devices XIV; PC1242207 (2023) https://doi.org/10.1117/12.2650625
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
In this paper, we present experimental data on hydrogen diffusion in single crystal and polycrystalline -Ga2O3 obtained from hydrogen diffusion and effusion experiments. The effective diffusion coefficients for H and D diffusion were obtained from diffusion experiments and amount to D  210-13 cm2/s at a temperature of 425 °C. Similar values were obtained from H effusion experiments. To obtain the energetic barrier for hydrogen migration in -Ga2O3 the heating rate of the effusion experiment was varied. The temperature at which the molecular H flux shows its maximum value increases with increasing heating rate. According to Beyer and Wagner [3] this method is suitable to determine the temperature dependence of the diffusion coefficient. The hydrogen effusion data were further analyzed in terms of a hydrogen density-of-states. State-of-the-art single crystal -Ga2O3 exhibits a well-defined peak at E – Etr ~ 1.5 eV.
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Norbert H. Nickel and K. Geilert "Hydrogen diffusion on β-Ga2O3 (Conference Presentation)", Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC1242207 (16 March 2023); https://doi.org/10.1117/12.2650625
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KEYWORDS
Hydrogen
Diffusion
Crystals
Data modeling
Oxides
Semiconductors
Photodetectors
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