Investigation Of Semiconductor Carrier Dynamics By Time-Resolved Reflectivity, Transmittance And Photoconductivity In The Picosecond Range

Harald Bergner; Volkmar Bruckner; Manfred Supianek; Mathias Lenzner

doi:10.1117/12.949987

8 March 1989 Investigation Of Semiconductor Carrier Dynamics By Time-Resolved Reflectivity, Transmittance And Photoconductivity In The Picosecond Range

Harald Bergner, Volkmar Bruckner, Manfred Supianek, Mathias Lenzner

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Proceedings Volume 1017, Nonlinear Optical Materials; (1989) https://doi.org/10.1117/12.949987
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

Using 25 ps pulses of Nd:YAG laser with tunable wavelength we studied relaxation processes, diffusion and fieldstrength dependent carrier mobility in semiconductors by different ps techniques. The sensitivity in reflectivity and transmittance experiments was improved by optimization of polarization, angle of incidence and wavelength of a probe beam. Using different carrier distributions we were able to distinguish between nonlinear and linear bulk and surface recombination and ambipolar diffusion, for example in crystalline silicon. At ps excitation the photoconductivity was measured using a correlation technique. The first optoelectronic switch of the correlator was a high mobility semi conductor to achieve extremely short electrical pulses (down to 6 ps) a part of the gap was covered by a light-tight layer. We measured the linear and nonlinear recombination rates in amorphous silicon, SOS, GaAs, GaSe etc. Furthermore, we have estimated the mobility-recombination time product for various semiconductors. Furthermore, we measured the dependence of carrier mobility on the applied field strength in GaAs.

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Harald Bergner, Volkmar Bruckner, Manfred Supianek, and Mathias Lenzner "Investigation Of Semiconductor Carrier Dynamics By Time-Resolved Reflectivity, Transmittance And Photoconductivity In The Picosecond Range", Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); https://doi.org/10.1117/12.949987

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KEYWORDS

Reflectivity

Semiconductors

Picosecond phenomena

Absorption

Diffusion

Silicon

Resistance

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