Breakdown of high-voltage silicon devices

Frank E. Peterkin; B. J. Hankla; R. A. Peterson; A. Rhagavendran; Paul Frazer Williams

doi:10.1117/12.146564

9 June 1993 Breakdown of high-voltage silicon devices

Frank E. Peterkin, B. J. Hankla, R. A. Peterson, A. Rhagavendran, Paul Frazer Williams

Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146564
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

We present the results of empirical studies of the breakdown of p⁺-i-n⁺, n⁺-i-n⁺, and p⁺-i-p⁺ silicon structures with approximately 1 cm long intrinsic regions. These results show that the contacts have a strong effect on the breakdown characteristics of these devices. We present results for laminated structures and for a device with a ribbed surface which show that the breakdown characteristics of silicon devices can be improved significantly by such geometry modifications. We also present empirical evidence that double injection effects occur in p⁺-i-n⁺ devices, and that these effects will limit the efficacy of such devices when subject to relatively long voltage pulses.

Citation Download Citation

Frank E. Peterkin, B. J. Hankla, R. A. Peterson, A. Rhagavendran, and Paul Frazer Williams "Breakdown of high-voltage silicon devices", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); https://doi.org/10.1117/12.146564

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