Paper
8 March 1989 Beam Amplification By Transient Energy Transfer In GaAs And Si
J. Dubard, A. L. Smirl, A. G. Cui, G. C. Valley, T. F. Boggess
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Proceedings Volume 1017, Nonlinear Optical Materials; (1989) https://doi.org/10.1117/12.949973
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany
Abstract
Two beam coupling experiments with 29-ps (FWHM) pulses at a wavelength of 1.06 μm have been performed in GaAs and Si. By optimization of pump-probe energy ratio, time delay and fluence we obtained optical gain up to 25 in GaAs at a fluence of 25 mJ/cm compared to roughly 100 mJ/cm2 required to obtain similar gain in Si. Optical amplifiers with high gain for cw radiation have been demonstrated over the past ten years using the photorefractive effect in BaTiO3, KNb03, Bi12Si020 and GaAs. Amplification in these materials, which occurs even when the probe (or signal) and pump are of equal intensity, is produced by the shifted grating found in photorefractive materials when diffusion is the dominant transport mechanism or obtained by a frequency offset between the beams when drift is the dominant transport.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Dubard, A. L. Smirl, A. G. Cui, G. C. Valley, and T. F. Boggess "Beam Amplification By Transient Energy Transfer In GaAs And Si", Proc. SPIE 1017, Nonlinear Optical Materials, (8 March 1989); https://doi.org/10.1117/12.949973
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KEYWORDS
Gallium arsenide

Silicon

Energy transfer

Absorption

Picosecond phenomena

Diffusion

Photorefraction

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