Paper
22 January 2010 Advances in III-V based photonic crystals for integrated optical processing
Sylvain Combrié, Pierre Colman, Chad Husko, Quynh Vy Tran, Alfredo De Rossi
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Abstract
Compactness, massive integration of multiple functions on a single chip and power consumption are crucial for transmission of large aggregated bit rates at short distance. Efficient implementation of data processing at the optical level are very attractive. Here we present a technology for implementing ultra-fast switching with recordlow energy·recovery time product. We developed high-quality photonic crystal micro-resonators based on III-V semiconductors. The very short carrier lifetime of nano-pattened Gallium Arsenide enabled us to achieve 6 ps recovery time, thus enabling operations beyond the 100Gb/s rate. For broadband operation, highly nonlinear waveguides with low insertion loss have been demonstrated.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sylvain Combrié, Pierre Colman, Chad Husko, Quynh Vy Tran, and Alfredo De Rossi "Advances in III-V based photonic crystals for integrated optical processing", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 760815 (22 January 2010); https://doi.org/10.1117/12.846852
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Waveguides

Gallium arsenide

Photonic crystals

Absorption

Silicon

Integrated optics

Picosecond phenomena

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