Maskless I.C. Fabrication Using An Electron Beam Micropattern Generator

W. R. Livesay

doi:10.1117/12.954260

1 March 1974 Maskless I.C. Fabrication Using An Electron Beam Micropattern Generator

W. R. Livesay

Proceedings Volume 0055, Technological Advances in Micro and Submicro Photofabrication Imagery; (1974) https://doi.org/10.1117/12.954260
Event: Acquisition and Analysis of Pictorial Data, 1974, San Diego, United States

Abstract

The rapid progress and growth which has been made in the semiconductor industry over the past decade has been due to the improvements in processes and equipment to manufacture integrated circuits. The most significant factor in the evolution of I.C.'s has been the increasing miniaturization of semiconductor devices. The reason for making circuits smaller is quite simple: If critical dimensions are cut in two, a fourfold increase in the number of devices per square area is achieved. As Figure 1 indicates, as the dimensions of a device are reduced, the power required per function decreases; the interelectrode capacitance decreases; and the frequency response improves. The cost of I.C.'s per function has steadily decreased over the past decade, and this is due to the increased packing density by the further miniaturization of the integrated circuit components. However, this rapid growth in microelectronics is being threatened by the photolithographic limit imposed by the wavelength of light.

Citation Download Citation

W. R. Livesay "Maskless I.C. Fabrication Using An Electron Beam Micropattern Generator", Proc. SPIE 0055, Technological Advances in Micro and Submicro Photofabrication Imagery, (1 March 1974); https://doi.org/10.1117/12.954260

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