Based on uncooled infrared microbolometer focal plane array technology, an uncooled THz microbolometer detector with 25um pixel pitch and 160×120 array size was developed. The CTIA read-out integrated circuit was designed and manufactured with 0.25um standard CMOS process. The resonant cavity height of the micro-bridge pixel was increased from about 1.5um to about 23um to enhance the absorption in the THz wavelengthes. The increased resonant cavity height was realized with tungsten plug and CMP process above the aluminum reflector. The THz detector was packaged with ceramic hermetic package, a parylene coating was developed on high resistivity silicon window to increase the THz transmission. The developed THz detector was applied in beam profiling of QCL, LN crystal sources etc.
Zhejiang Dali Technology Co. Ltd. is one of the major players in the China Infrared industry. The company has been working on infrared imagers using uncooled FPAs for about 15 years. It started the research and development of uncooled microbolometer detectors since 2006, and has brought several uncooled detectors into mass production, including 35um 384x288, 25um 160x120, 384x288, 640x480, and 17um 384x288, 640x480. In this presentation, we will describe the uncooled infrared detector and imager development at DALI Technology.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.