Mr. Fred Huang Profile

Fred Huang

at LPKF (Tianjin) Co Ltd

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 13 November 2010 Paper

Experimental study of laser dicing sapphire substrate by green DPSS laser

Xiao-zhu Xie, Fu-min Huang, Xin Wei, Wei Hu, Qing-lei Ren

Proceedings Volume 7844, 78440T (2010) https://doi.org/10.1117/12.870340

KEYWORDS: Sapphire, Pulsed laser operation, Scanning electron microscopy, Sapphire lasers, Laser processing, Diode pumped solid state lasers, Semiconducting wafers, Semiconductor lasers, Q switched lasers, Particles

Read Abstract +

Sapphire is an important material for fabricating photonic devices such as light emitting diode (LED). The matter is strongly resistant to wet and dry chemical etching because of its unique physical property. Moreover, there also exist some problems like chipping and edge crack by diamond dicing. Thereby, lots of emerging laser-based techniques have been invented, including various lasers at different wavelength and different technologies, which have gradually become the alternative powerful and efficient methods to dicing this material. Most of investigations on laser dicing sapphire are conducted by UV and ultra-short pulse laser, few by green laser with wavelength of 532nm. So a green laser with wavelength of 532nm and high repetition frequency is employed to dice sapphire substrate. The effects of machining parameters as laser power, repetition frequency, scanning velocity and number of scans on kerf width, kerf depth and aspect ratio are analyzed. Kerf width and depth are measured by optical microscope (OM) and micro-morphology of sapphire is observed by scanning electron microscopy (SEM). Results indicate that narrower kerf, higher aspect ratio and better surface quality can be obtained under the combined processing parameters of medium laser power, lower repetition frequency, medium scanning velocity and multiple scans, which proves green laser to be an effective tool to dice sapphire substrate.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years