Bulk InGaAs and InGaAsP and quantum well structure were grown on different oxide pattern. The material composition varies with the width of oxide pattern. The PL peak wavelength of the grown SAG quantum well is determined by the variation of both the material composition and the well width. We have experimentally identified the ratio of the contribution from the two sources, which agree well with the theoretical calculation from the measured thickness changes.
With the development of photonic devices technology, optical communication networks require highly integrated photonic devices. The key problems in integrated devices are how to integrate these active devices and passive devices together and achieve the low loss and high performance. In this paper, we are talking about a new processing technology to the integrated device which shows a great potential in the application of integrated devices. The basic idea is to use semi-insulating material as the buried heterostructure and cladding material at the same time, then open a hole on the active region to define and confine the current flow. We did lots of experiments to prove this method, and the results showed the feasibility. This new method can have wide applications not only on the issues of the integrated devices. It can be used in very narrow waveguide devices and other applications.
By using the selective area growth (SAG) technique, the grating over growth technique, and the buried hetero-structure (BH) regrowth technique, we have successful fabricated integrated distributed feedback laser and electro-absorption modulator. A suitable tensile strain is introduced during the multiple quantum well (MQW) growth to compensate the compressive strain caused by the SAG effect. To obtain better control on the growth condition and grating coupling coefficient, a quaternary grating laser is used. The best DFB laser shows a threshold current of around 12 mA and slope efficiency up to 0.13 mW/mA from one facet.
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