KEYWORDS: Diamond, Nonlinear dynamics, Plasma, Signal processing, Emission spectroscopy, Temperature metrology, Chemical vapor deposition, Diagnostics, Process modeling
In this paper, the experimental synthesis of diamond films and optical emission spectroscopy (OES) of the gaseous phase species are studied in the range of substrate temperature from Ts = 300°C to 850°C. The high quality sub-microcrystalline diamond films are successfully deposited at substrate temperature (330 ≈ 340)°C by adopting glow plasma assisted hot filament chemical vapor deposition (GPCVD). For the first time, in situ OES is applied to diagnose weak signal of GPCVD system when CH4 and H2 are used as the input gas, and the reactive species are identified in diamond growth processes. A primary model of diamond films growing at low temperature is presented by studying dynamic behavior for nonequilibrium plasma reactions.
In this paper, nanocrystalline diamond films had been synthesized by near surface glow discharge chemical vapor deposition on single-crystalline (100) silicon substrates when methane and hydrogen acted as input gases. The characters of the diamond films had been identified by scanning electron microscopy (SEM), Raman Spectrum and X-ray diffraction (XRD). The analytic results show that the high quality nanocrystalline diamond film of (111) orientation had been deposited on single-crystalline (100) silicon substrate at temperature of approximately 850°C. Simultaneously, the studies of the influence of gas pressure and CH4 concentration in feeding gas on the diamond growth were made.
In this work, excimer laser (XeC1 308nm) is adopted to ablate the carbon target in order to deposit high quality nano-crystalline diamond films via electron assisted chemical vapor deposition (EACVD). In experiment, the temperature of substrate is about 300~450 degree Celsius, reacting gas is the mixture of methane and hydrogen in which volume ratio of methane to hydrogen is about 0.7 %, laser power density is 10-710b0 W/cm2. Experimental results show that the sharp peak in Raman spectra of sample films appears at 1332cm-1, which indicates crystalline diamond phase is formed in the samples. And the (lii) characteristic diffraction peak of diamond appears at 20=43.9° in X-ray diffraction spectra. Finally, the growth mechanism of diamond film at low temperature is discussed.
In this paper, diamond film is deposited at low substrate temperature by electron-assisted chemical vapor deposition (EACVD). The quality of diamond film is analyzed by the scanning electron microscope (SEM), Raman spectrum and x-ray diffraction (XRD). The results show that the high quality film of (111) orientation is deposited at low temperature of about 500 degree(s)C by the EACVD technique. Meanwhile, the mechanism of the deposition at low temperature is also discussed.
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