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Yijiao Qiu

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Proceedings Article | 22 October 2010 Paper

Calculation of optical band gaps of a-Si:H thin films by ellipsometry and UV-Vis spectrophotometry

Yijiao Qiu, Wei Li, Maoyang Wu, Junwei Fu, Yadong Jiang

Proceedings Volume 7658, 76585E (2010) https://doi.org/10.1117/12.866177

KEYWORDS: Thin films, UV optics, Ellipsometry, Spectrophotometry, Refractive index, Protactinium, Optical testing, Absorption, Transmittance, Nitrogen

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Hydrogenated amorphous silicon (a-Si:H) thin films doped with Phosphorus (P) and Nitrogen (N) were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical band gaps of the thin films obtained through either changing the gas pressure (P-doped only) or adulterating nitrogen concentration (with fixed P content) were investigated by means of Ellipsometric and Ultraviolet-Visible (UV-Vis) spectroscopy, respectively. Tauc formula was used in calculating the optical band gaps of the thin films in both methods. The results show that Ellipsometry and UV-Vis spectrophotometry can be applied in the research of the optical properties of a-Si:H thin films experimentally. Both methods reflect the variation law of the optical band gaps caused by CVD process parameters, i.e., the optical band gap of the a-Si:H thin films is increased with the rise of the gas pressure or the nitrogen concentration respectively. The difference in optical band gaps of the doped a-Si:H thin films calculated by Ellipsometry or UV-Vis spectrophotometry are not so great that they both can be used to measure the optical band gaps of the thin films in practical applications.

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