Prof. Yasushi Nanishi Profile

Prof. Yasushi Nanishi

at Ritsumeikan Univ

SPIE Involvement:

Conference Program Committee | Editor | Author

Proceedings Article | 27 March 2013 Paper

Application of DERI method to InN/InGaN MQW, thick InGaN and InGaN/InGaN MQW structure growth

T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi

Proceedings Volume 8625, 862502 (2013) https://doi.org/10.1117/12.2007258

KEYWORDS: Indium gallium nitride, Indium nitride, Gallium, Dielectrophoresis, Gallium nitride, Nitrogen, Light emitting diodes, Scanning transmission electron microscopy, Infrared radiation, Semiconductors

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Proceedings Article | 3 March 2011 Paper

Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiation

Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi

Proceedings Volume 7939, 793904 (2011) https://doi.org/10.1117/12.874840

KEYWORDS: Indium nitride, Dielectrophoresis, Indium gallium nitride, Gallium, Gallium nitride, Diffraction, Transmission electron microscopy, Nitrogen, Reflection, Scanning electron microscopy

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Proceedings Article | 17 February 2009 Paper

Fabrication of position-controlled InN nanocolumns by ECR-MBE

T. Araki, D. Fukuoka, H. Tamiya, S. Harui, H. Miyake, K. Hiramatsu, Y. Nanishi

Proceedings Volume 7216, 72160N (2009) https://doi.org/10.1117/12.811764

KEYWORDS: Indium nitride, Gallium nitride, Scanning electron microscopy, Ion beams, Nanolithography, Transmission electron microscopy, Chemical species, Molecular beam epitaxy, Luminescence, Ions

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Proceedings Article | 15 February 2008 Paper

Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopy

M. Kaneko, A. Hinoki, A. Suzuki, T. Araki, Y. Nanishi

Proceedings Volume 6894, 689418 (2008) https://doi.org/10.1117/12.765947

KEYWORDS: Gallium nitride, Electrodes, Silicon carbide, Field effect transistors, Interfaces, Microscopy, Silicon, Semiconductors, Image analysis, Natural surfaces

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Proceedings Article | 8 February 2007 Paper

The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds

T. Suski, G. Franssen, A. Kamińska, A. Khachapuridze, H. Teisseyre, J. Plesiewicz, L. Dmowski, H. Lu, W. Schaff, M. Kurouchi, Y. Nanishi

Proceedings Volume 6473, 647311 (2007) https://doi.org/10.1117/12.705563

KEYWORDS: Indium gallium nitride, Indium, Indium nitride, Luminescence, Gallium, Absorption, Optical properties, Light emitting diodes, Gallium nitride, Physics

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Proceedings Article | 8 February 2007 Paper

Thermal analysis of AlGaN/GaN HFETs using electro-thermal simulation and micro-Raman spectroscopy

Tatsuya Fujishima, Kaoru Inoue, Kenichi Kosaka, Akihiro Hinoki, Tomoyuki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Shinichi Kamiya, Akira Suzuki, Tsutomu Araki, Yasushi Nanishi

Proceedings Volume 6473, 647317 (2007) https://doi.org/10.1117/12.699760

KEYWORDS: Silicon carbide, Sapphire, Temperature metrology, Micro raman spectroscopy, Gallium nitride, Computer simulations, Numerical simulations, Raman spectroscopy, Thermal analysis, Heterojunctions

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Showing 5 of 6 publications

SPIE Conference Volume | 27 March 2017

Gallium Nitride Materials and Devices XII

SPIE Conference Volume | 21 July 2016

Gallium Nitride Materials and Devices XI

SPIE Conference Volume | 30 April 2015

Gallium Nitride Materials and Devices X

SPIE Conference Volume | 4 April 2014

Gallium Nitride Materials and Devices IX

SPIE Conference Volume | 11 April 2013

Gallium Nitride Materials and Devices VIII

Showing 5 of 10 publications

Conference Committee Involvement (19)

Gallium Nitride Materials and Devices XX

27 January 2025 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIX

29 January 2024 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVIII

30 January 2023 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVII

24 January 2022 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVI

6 March 2021 | Online Only, California, United States

Gallium Nitride Materials and Devices XV

4 February 2020 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIV

4 February 2019 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIII

29 January 2018 | San Francisco, California, United States

Gallium Nitride Materials and Devices XII

30 January 2017 | San Francisco, California, United States

Gallium Nitride Materials and Devices XI

15 February 2016 | San Francisco, California, United States

Gallium Nitride Materials and Devices X

9 February 2015 | San Francisco, California, United States

Gallium Nitride Materials and Devices IX

3 February 2014 | San Francisco, California, United States

Gallium Nitride Materials and Devices VIII

4 February 2013 | San Francisco, California, United States

Gallium Nitride Materials and Devices VII

23 January 2012 | San Francisco, California, United States

Gallium Nitride Materials and Devices VI

24 January 2011 | San Francisco, California, United States

Gallium Nitride Materials and Devices V

25 January 2010 | San Francisco, California, United States

Gallium Nitride Materials and Devices IV

26 January 2009 | San Jose, California, United States

Gallium Nitride Materials and Devices III

21 January 2008 | San Jose, California, United States

Gallium Nitride Materials and Devices II

22 January 2007 | San Jose, California, United States

Showing 5 of 19 Conference Committees

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