Ms. Ya Deng Profile

Ya Deng

at Harbin Institute of Technology

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 27 March 2022 Paper

X-ray stress measurement of SiC single-crystal induced by laser ablation

Ya Deng, Yufeng Zhou, Yumin Zhang

Proceedings Volume 12169, 12169A2 (2022) https://doi.org/10.1117/12.2625806

KEYWORDS: Laser ablation, Silicon carbide, X-rays, Crystals, Laser irradiation, Diffraction, Laser crystals, X-ray diffraction, Ultraviolet radiation, Semiconducting wafers

Read Abstract +

The residual stress distribution induced by nanosecond UV laser irradiation on the surface of SiC single crystal was detected through X-ray stress measurement method in this manuscript. In order to explain the generation mechanism of the residual stresses, the surface morphology of the laser ablation zone was characterized by laser scanning confocal microscopy. Besides, the material compositions of the ablation zone were also observed by using energy dispersive X-ray spectrometer. The measurement results indicated that tensile stress distribution existed around the laser-irradiated zone, while the center position of the laser spot had the smaller residual stresses. There were obvious bulges at the ablation zone margin, which may be caused by the melting of the material and the splashing and re-solidification of molten material in the ablation hole. In addition, there exists oxidation phenomenon in the irradiated region by comparing the EDS results of laser irradiated and unirradiated regions. This suggested that the temperature reached its melting point and photothermal ablation occurred when laser irradiated on the surface of the silicon carbide specimen. Therefore, it can be concluded that the existence of residual stresses was related to the local thermal expansion caused by laser irradiation. And the residual stresses at the marginal zone had the larger tensile stresses because of the transverse extrusion effect.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years