Two laboratory methods of gold nanoelectrodes fabrication on the top of a silicon substrate were developed in this work. Both uses an electron-beam lithography. First one is based on a positive tone resist, a cold development and a lift-off technique. Second one is based on a negative tone resist and an ion etching. Methods comparison took into account the following results: obtained resolution, edge roughness and conductance between electrodes. As a result we conclude that only electrodes created by the lift-off technique are suitable for creation of a logic element based on a disordered dopant atoms network. The reason is a high conductance of a silicon after the ion etching.
Single-electron transistor, parameters and characteristics of which are fundamentally improve with decreasing of sizes of the elements it is created with, is a promising element of extremely small, molecular-scaled electronics. An atomic transistor consisting of a monatomic charge center inside a molecule connected with the source and the drain electrodes by aurophilic terminal groups of this molecule is the most promising version of such a transistor. However, the creation of a reliable technology for the manufacturing of such nanoelements is not yet completed and is a very urgent task. In this paper a version of such a molecular-atomic nanotransistor has been developed and implemented.
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