We report a current status of high-power GaN HEMTs for high-power and high-efficiency amplifiers with higher
efficiency by 5% especially at a backed-off region than the conventional GaN HEMTs. First, we introduce our specific
device structure GaN HEMT with dispersion-free I-V characteristics, low Idsq-drift and high reliability. Record average
drain efficiency of over 50% and linear gain of 17.2 dB were obtained at an output power of 45 dBm and 2.5 GHz. Next,
we discuss their reliability with high-temperature life tests resulting in their estimated life of over 1 x 106 hours at Tj of
200 °C. High-k insulated gate HEMTs using Ta2O5 were also developed. Finally, we describe the next generation GaN
HEMTs for millimeter-wave applications.
Conference Committee Involvement (2)
Gallium Nitride Materials and Devices V
25 January 2010 | San Francisco, California, United States
Gallium Nitride Materials and Devices IV
26 January 2009 | San Jose, California, United States
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