Mr. Tomoki Ono Profile

Tomoki Ono

Senior Researcher at Sony Corp

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Proceedings Article | 18 February 2010 Paper

Characteristics of red-emitting broad area stripe laser diodes with zinc diffused window structures

Tomoki Ohno, Mikio Takiguchi, Kazuya Wakabayashi, Hiroyuki Uchida, Kaori Naganuma, Maho Ohara, Satoshi Ito, Shoji Hirata

Proceedings Volume 7583, 75830W (2010) https://doi.org/10.1117/12.840818

KEYWORDS: Zinc, Semiconductor lasers, Reliability, Cladding, Diffusion, Indium gallium phosphide, Absorption, Aluminum, Quantum wells, Chemical species

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We have applied zinc diffused window structures to 640 nm broad area stripe laser diodes (BALDs) for the first time. A solid-phase zinc diffusion technique was used for a thick single quantum well (SQW) in GaInP employing the short wavelength and disordered active layer possessed a blue shift of 58 nm in photoluminescence spectrum. We fabricated 10 mm arrays including twenty-five BALDs and each BALD consists of a 60 μm ridge stripe and a 1000 μm cavity. An initial catastrophic optical damage (COD) level of the window laser was increased by four times of a conventional none-window laser. A long-term reliability under automatic current control was investigated for initial output powers of 13W and 15W which overcome a previous demonstration of 7.2 W. Measured degradations within a period of 1000-hours were 5 % or less, in contrast a half-life period of our conventional none-window laser with an initial output power of 10 W was only 120-hours. Therefore the window structure improved the BALD in terms of the COD level and the long-term reliability.

Proceedings Article | 9 September 2004 Paper

Characterization of very small aperture GaN lasers

Tomoki Ohno, Amit Itagi, Fang Chen, James Bain, Tuviah Schlesinger

Proceedings Volume 5380, (2004) https://doi.org/10.1117/12.556991

KEYWORDS: Aluminum, Objectives, Gallium nitride, Coating, Surface plasmons, Solids, Free space, Near field, Dielectrics, Transducers

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We have fabricated GaN blue VSALs (wavelength, lamda = 405 nm), and investigated their emission in terms of slope efficiency through far-field measurements. The slope efficiency of power emission from a 100 nm x 200 nm rectangular aperture as collected in the far field by an objective lens (NA = 0.65) was 1.8 ± 0.6 mW/A for the blue VSAL’s as compared with 3.6 mW/A for red VSAL's (658 nm). Both of these numbers have background transmission through the Al coating subtracted. Prior to apertures formation, slope efficiencies of 1.4 mW/A (blue) and 0.3 mW/A (red) were measured as light was transmitted through the Al coating. Finite-Difference Frequency-Domain (FDFD) simulation was used to estimate the collection efficiency of the optical measurement setup and showed the lens to collect 45% of the light emitted by the blue VSAL and 38% of the light emitted by the red. The FDFD simulations were also used to compute the efficiency of power transmission through the aperture and into the objective lens (94 ppm for blue and 65 ppm for red). Using the expected transmission coefficient for the 50 nm Al layers (220 ppm for blue and 95 ppm for red), the predicted SE values of the apertured structures are 0.6 mW/A for blue and 0.21 mW/A for red. Measured values are significantly higher, suggesting that non-idealities in aperture shape result in higher transmission efficiency, and/or that the Al coating thickness and its associated transmission efficiency have been overestimated. A thickness error of 10 nm out of 50 is enough to explain the discrepancy. Extending the analysis to 30 nm x 60 nm rectangular aperture (in cut-off for both wavelengths), the calculated output power slope efficiency for the VSAL is 7.3 microW/A for the blue and 0.06 microW/A for the red, a factor of over 100 x greater output power slope efficiency for the blue light through these smaller structures.

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