Dr. Thomas J. Rotter Profile

Dr. Thomas J. Rotter

Director of R&D at Center for High Technology Materials, UNM

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 4 October 2024 Presentation

Semiconductor membranes for millimeter-wave shielding and infrared detection

Emma Renteria, Grant Heileman, Jordan Neely, Sadhvikas Addamane, Thomas Rotter, Ganesh Balakrishnan, Christos Christodoulou, Francesca Cavallo

Proceedings Volume PC13119, PC131191R (2024) https://doi.org/10.1117/12.3028202

KEYWORDS: Semiconductors, Infrared detection, Photodiodes, Infrared radiation, Transmittance, P-type semiconductors, Optical fabrication, Gallium arsenide, Infrared detectors, Heterojunctions

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Proceedings Article | 10 June 2024 Presentation

An approach to realize passively coupled PCSEL arrays

Chhabindra Gautam, Mingsen Pan, Yudong Chen, Thomas Rotter, Ganesh Balakrishnan, Weidong Zhou

Proceedings Volume PC13029, PC1302901 (2024) https://doi.org/10.1117/12.3017582

KEYWORDS: Semiconductor lasers, Vertical cavity surface emitting lasers, Quantum experiments, Photonic crystals, Optical coherence, Laser applications, Feedback control, Quantum wells, Quantum simulation, Quantum optical communication

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Proceedings Article | 13 March 2024 Presentation

Impact of electrical injection on PCSELs by utilizing different electrode designs

Chhabindra Gautam, Mingsen Pan, Subhashree Seth, Thomas Rotter, Ming Zhou, Ricky Gibson, Bradley Thompson, Shanhui Fan, Ganesh Balakrishnan, Weidong Zhou

Proceedings Volume 12867, 1286710 (2024) https://doi.org/10.1117/12.3002447

KEYWORDS: Electrodes, Semiconductor lasers, Photonic crystals, Three dimensional sensing, Semiconductors, Optical simulations, Materials properties, Materials processing, Light sources, Laser applications

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Proceedings Article | 13 March 2024 Presentation

Optimization of GaSb buffer layers on silicon substrates for optoelectronic applications

Mega Frost, Fatih Ince, Darryl Shima, Thomas Rotter, Ganesh Balakrishnan

Proceedings Volume PC12891, PC128910A (2024) https://doi.org/10.1117/12.3002723

KEYWORDS: Silicon, Gallium antimonide, Tunable filters, Optoelectronics, Transmission electron microscopy, Mid-IR, Laser development, X-ray diffraction, Spectroscopy, Semiconductor lasers

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Proceedings Article | 9 March 2024 Presentation

Molecular beam epitaxy based growth of GaSb quantum dots on silicon substrates

Mega Frost, Subhashree Seth, Fatih Ince, Darryl Shima, Thomas Rotter, Ganesh Balakrishnan

Proceedings Volume PC12882, PC1288208 (2024) https://doi.org/10.1117/12.3003063

KEYWORDS: Quantum dots, Gallium antimonide, Silicon, Molecular beam epitaxy, Gallium arsenide, Transmission electron microscopy, Spectroscopy, Photoluminescence, Lithography, HF etching

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Proceedings Article | 9 June 2023 Presentation

Design and fabrication of basic silicon quantum photonic integrated circuits

Marek Osinski, Sami Nazib, Troy Hutchins-Delgado, Erika Sommer, Hosuk Lee, Loic Djamen Tchapda, Ruth Gyan-Darkwa, Erum Jamil, Thomas Rotter, Ganesh Balakrishnan, John Nogan, Tzu-Ming Lu, Ivan Komissarov, Roman Sobolewski

Proceedings Volume PC12570, PC1257003 (2023) https://doi.org/10.1117/12.2670470

KEYWORDS: Waveguides, Single photon detectors, Silicon, Quantum photonics, Integrated circuits, Fabrication, Design and modelling, Quantum entanglement, Quantum coherence, Active optics

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Proceedings Article | 5 March 2022 Presentation

Interband cascade LEDs grown on silicon substrates

Chadwick Canedy, William Bewley, Stephanie Tomasulo, Chul Soo Kim, Charles Merritt, Igor Vurgaftman, Jerry Meyer, Mijin Kim, Thomas Rotter, Ganesh Balakrishnan, Terry Golding

Proceedings Volume PC12006, PC120060B (2022) https://doi.org/10.1117/12.2607369

KEYWORDS: Silicon, Semiconducting wafers, Gallium antimonide, Light emitting diodes, Continuous wave operation, Mid-IR, Manufacturing, Control systems, Surface roughness, Photonic integrated circuits

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Proceedings Article | 4 June 2015 Paper

Confocal Raman spectroscopy and AFM for evaluation of sidewalls in type II superlattice FPAs

T. Rotter, T. Busani, P. Rathi, F. Jaeckel, P. Reyes, K. Malloy, A. Ukhanov, E. Plis, S. Krishna, M. Jaime-Vasquez, N. Baril, J. Benson, D. Tenne

Proceedings Volume 9451, 94510R (2015) https://doi.org/10.1117/12.2178162

KEYWORDS: Raman spectroscopy, Staring arrays, Atomic force microscopy, Sensors, Confocal microscopy, Phonons, Gallium antimonide, Indium arsenide, Superlattices, Astatine

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Proceedings Article | 16 March 2015 Paper

GaSb thermophotovoltaics: current challenges and solutions

N. Rahimi, D. Herrera, A. Aragon, D. Shima, O. Romero, T. Rotter, T. Busani, O. Lavrova, G. Balakrishnan, L. Lester

Proceedings Volume 9358, 935816 (2015) https://doi.org/10.1117/12.2079635

KEYWORDS: Gallium antimonide, Diodes, Crystals, Indium gallium arsenide antimonide, Annealing, Ion implantation, Beryllium, Scanning electron microscopy, Resistance, Gallium

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Proceedings Article | 7 March 2014 Paper

Toward dynamic metamaterials for monothically integrated multilayer polarization filters

Nicole Pfiester, Corey Shemelya, Thomas Rotter, Ganesh Balakrishnan, Thomas Vandervelde

Proceedings Volume 8982, 89820M (2014) https://doi.org/10.1117/12.2040827

KEYWORDS: Metamaterials, Gallium arsenide, Digital signal processing, Polarization, Semiconducting wafers, Dielectric polarization, Thin films, Digital filtering, Optical lithography, Sapphire

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Proceedings Article | 25 March 2013 Paper

Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

N. Rahimi, A. Aragon, O. Romero, D. Kim, N. B. Traynor, T. Rotter, G. Balakrishnan, S. Mukherjee, L. Lester

Proceedings Volume 8620, 86201K (2013) https://doi.org/10.1117/12.2003392

KEYWORDS: Gold, Gallium antimonide, Platinum, Germanium, Annealing, Gallium arsenide, Palladium, Resistance, Nickel, Temperature metrology

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Proceedings Article | 26 February 2013 Paper

Investigation of InAs quantum dashes for 1.45-2.1 µm vertical external cavity surface emitting laser active regions

T. Rotter, P. Ahirwar, D. Shima, S. Addamane, C. Hains, L. R. Dawson, G. Balakrishnan

Proceedings Volume 8606, 86060D (2013) https://doi.org/10.1117/12.2005427

KEYWORDS: Indium arsenide, Quantum wells, Gallium arsenide, Quantum dots, Gallium antimonide, Electroluminescent displays, Etching, Transmission electron microscopy, Semiconducting wafers, Crystals

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Proceedings Article | 26 February 2013 Paper

TEM based analysis of III-Sb VECSELs on GaAs substrates for improved laser performance

P. Ahirwar, D. Shima, T. Rotter, S. P. Clark, S. Addamane, C. Hains, L. Dawson, G. Balakrishnan, R. Bedford, Y. Lai, A. Laurain, J. Hader, J. Moloney

Proceedings Volume 8606, 86060E (2013) https://doi.org/10.1117/12.2005301

KEYWORDS: Gallium arsenide, Gallium antimonide, Quantum wells, Interfaces, Transmission electron microscopy, Phonons, Semiconductor lasers, Neodymium, Image resolution

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Proceedings Article | 15 February 2012 Paper

Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance

Alexandre Laurain, Jörg Hader, Yi-Ying Lai, Tsuei-Lian Wang, Mike Yarborough, Ganesh Balakrishnan, Thomas Rotter, Pankaj Ahirwar, Jerome Moloney

Proceedings Volume 8242, 82420S (2012) https://doi.org/10.1117/12.909412

KEYWORDS: Semiconductors, Pulsed laser operation, Mirrors, Gallium arsenide, Quantum wells, Continuous wave operation, Photons, Gallium antimonide, Data modeling

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Proceedings Article | 21 May 2011 Paper

Characterization of different transitions in quantum dots-in-a-well (DWELL) infrared photodetectors

Ajit Barve, Jun Oh Kim, Yagya Sharma, Thomas Rotter, Saumya Sengupta, John Montoya, Sanjay Krishna

Proceedings Volume 8012, 801241 (2011) https://doi.org/10.1117/12.892025

KEYWORDS: Absorption, Quantum dots, Quantum efficiency, Quantum wells, Quantum well infrared photodetectors, Infrared radiation, Infrared photography, Photodetectors, Sensors, Staring arrays

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Proceedings Article | 22 February 2011 Paper

Power scaling of cw and pulsed IR and mid-IR OPSLs

J. Moloney, J. Hader, T.-L. Wang, Yi. Ying, Y. Kaneda, J. M. Yarborough, T. Rotter, G. Balakrishnan, C. Hains, S. Koch, W. Stolz, B. Kunert, R. Bedford

Proceedings Volume 7919, 79190S (2011) https://doi.org/10.1117/12.874201

KEYWORDS: Mid-IR, Quantum wells, Reflectivity, Gallium arsenide, Semiconductor lasers, Semiconductors, Etching, Reflection, Absorption

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Proceedings Article | 22 February 2011 Paper

Lattice mismatched growth for mid-IR VECSELs

G. Balakrishnan, T. Rotter, P. Ahirwar, S. Clark, V. Patel, A. Albrecht, C. Hains, Yi-Ying Lai, T. Wang, J. Yarborough, D. Mathine, Yushi Kaneda, Jerome Moloney, Jörg Hader, S. Koch

Proceedings Volume 7919, 79190G (2011) https://doi.org/10.1117/12.874234

KEYWORDS: Gallium arsenide, Gallium antimonide, Quantum wells, Mid-IR, Interfaces, Distributed Bragg reflectors, Epitaxy, Antimony, Semiconducting wafers, Crystals

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Proceedings Article | 22 February 2011 Paper

High-power 1.25 µm InAs QD VECSEL based on resonant periodic gain structure

Alexander Albrecht, Thomas Rotter, Christopher Hains, Andreas Stintz, Guofeng Xin, Tsuei-Lian Wang, Yushi Kaneda, Jerome Moloney, Kevin Malloy, Ganesh Balakrishnan

Proceedings Volume 7919, 791904 (2011) https://doi.org/10.1117/12.874321

KEYWORDS: Indium arsenide, Gallium arsenide, Diamond, Chemical vapor deposition, Mirrors, Semiconductor lasers, Heatsinks, Quantum dots, Indium, Output couplers

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Proceedings Article | 9 February 2011 Paper

GaAs/GaInP double heterostructure characterization for laser cooling of semiconductors

Chengao Wang, Chia-Yeh Li, Michael Hasselbeck, Thomas Rotter, Kevin Malloy, Mansoor Sheik-Bahae, Jerry Olson

Proceedings Volume 7951, 79510D (2011) https://doi.org/10.1117/12.878979

KEYWORDS: External quantum efficiency, Luminescence, Semiconductor lasers, Semiconductors, Temperature metrology, Gallium arsenide, Heterojunctions, Absorption, Internal quantum efficiency, Calorimetry

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Proceedings Article | 14 February 2008 Paper

Interfacial misfit dislocation array based growth of III-Sb active regions on GaAs/AlGaAs DBRs for high-power 2 um VECSELs

G. Balakrishnan, T. J. Rotter, A. Jallipalli, L. R. Dawson, D. L. Huffaker

Proceedings Volume 6871, 687111 (2008) https://doi.org/10.1117/12.776256

KEYWORDS: Gallium arsenide, Gallium antimonide, Quantum wells, Transmission electron microscopy, Luminescence, Antimony, Laser applications, Interfaces, Diffraction, Optical pumping

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Showing 5 of 20 publications

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