Prof. Srabanti Chowdhury Profile

Prof. Srabanti Chowdhury

at Stanford Univ

SPIE Involvement:

Author | Editor

Publications (8)

Proceedings Article | 15 March 2023 Presentation + Paper

Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution

Yuke Cao, James Pomeroy, Jingshan Wang, Patrick Fay, Bhawani Shankar, Srabanti Chowdhury, Martin Kuball

Proceedings Volume 12421, 124210E (2023) https://doi.org/10.1117/12.2652369

KEYWORDS: Electric fields, Gallium nitride, Anodes, Semiconductors, Second harmonic generation, Simulations, Doping, Fabrication, Etching, Device simulation

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Proceedings Article | 15 March 2023 Presentation + Paper

On uniform avalanche in III-nitrides and its application

Bhawani Shankar, Ke Zeng, Srabanti Chowdhury

Proceedings Volume 12430, 1243002 (2023) https://doi.org/10.1117/12.2649674

KEYWORDS: Gallium nitride, Diodes, Electric fields, Electroluminescence, Doping, Semiconductors, Anodes, Switching, Electrical phenomena, Silicon carbide

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Proceedings Article | 15 April 2021 Presentation

On ultra-wide-bandgap semiconductors, but particularly diamond

Srabanti Chowdhury

Proceedings Volume 11742, 117420Y (2021) https://doi.org/10.1117/12.2590578

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Proceedings Article | 17 September 2018 Presentation

A study of temperature dependent current-voltage (I-V-T) characteristics in Ni/(-201) β-Ga2O3 Schottky diode (Conference Presentation)

Jianyi Gao, Zheng Xu, Siwei Li, Srabanti Chowdhury

Proceedings Volume 10754, 107540D (2018) https://doi.org/10.1117/12.2323378

KEYWORDS: Diodes, Gallium, Oxides, Wide bandgap semiconductors, Temperature metrology, Nickel

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Proceedings Article | 19 September 2017 Presentation

III-nitride based N-polar current aperture vertical electron transistors (Conference Presentation)

Saba Rajabi, Saptarshi Mandal, Haoran Li, Matthew Laurent, Stacia Keller, Srabanti Chowdhury

Proceedings Volume 10381, 103810F (2017) https://doi.org/10.1117/12.2279576

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Proceedings Article | 23 August 2017 Presentation + Paper

Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer

Saptarshi Mandal, Anchal Agarwal, Elaheh Ahmadi, K. Mahadeva Bhat, Matthew Laurent, Stacia Keller, Srabanti Chowdhury

Proceedings Volume 10381, 1038108 (2017) https://doi.org/10.1117/12.2279435

KEYWORDS: Dielectrics, Transistors, Field effect transistors, Gallium nitride, Electronics, Magnesium, Electronic components, Switching, Semiconducting wafers, Ion implantation

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