We report the design and analysis of a novel sub nanometer narrow bandwidth grating using sidewall corrugated SOI rib waveguide. Wavelength filters with narrow bandwidth, smaller device footprint, lesser complexity and higher fabrication tolerance are essential for on-chip Wavelength Division Multiplexing (WDM) applications. In this paper, we propose a simple and effective method to obtain ultra-narrow bandwidth. The design consists of a deeply etched rib waveguide with slab sidewall corrugation for index modulation. In order to understand the device characteristics, numerical investigations were employed. With a corrugation width of 60 nm, narrow 3-dB bandwidth of 0.5 nm at 1550 nm was achieved. Our results also serve as the precursor for a Dense WDM architecture with channel spacing of 0.8 nm, realizable by varying the grating pitch.
A micro/nanofabrication feasible compact photonic crystal (PC) ring-resonator-based channel drop filter has been designed and analyzed for operation in C and L bands of communication window. The four-channel demultiplexer consists of ring resonators of holes in two-dimensional PC slab. The proposed assembly design of dense wavelength division multiplexing setup is shown to achieve optimal quality factor, without altering the lattice parameters or resonator size or inclusion of scattering holes. Transmission characteristics are analyzed using the three-dimensional finite-difference time-domain simulation approach. The radiation loss of the ring resonator was minimized by forced cancelation of radiation fields by fine-tuning the air holes inside the ring resonator. An average cross talk of −34 dB has been achieved between the adjacent channels maintaining an average quality factor of 5000. Demultiplexing is achieved by engineering only the air holes inside the ring, which makes it a simple and tolerant design from the fabrication perspective. Also, the device footprint of 500 μm2 on silicon on insulator platform makes it easy to fabricate the device using e-beam lithography technique.
Quantum communication or more specifically quantum information processing is considered as the future of information science and technology. In this paper we propose a scheme to implement quantum communication at the device level using integrated optics. We implement the quantum communication protocol BB84, in a waveguide based circuit using integrated optics. We also propose a high dimensional quantum key distribution method implementation using integrated optics. In the earlier one polarized photons are used as the carriers of quantum information, while in second one electromagnetic modes in the waveguide are used to carry quantum information. The high dimensional quantum communication method is used to increase the information content of protocol thus increasing on the data rates. This is done by encoding into a larger state space. We have used electromagnetic modes for encoding since the polarization method is not efficient to carry information in a larger state space.
A technique to determine the strain field in one-dimensional (1D) photonic crystal (PC) involving high strain rate, high temperature around shock or ballistic impact is proposed. Transient strain sensing is important in aerospace and other structural health monitoring (SHM) applications. We consider a MEMS based smart sensor design with photonic crystal integrated on a silicon substrate for dynamic strain correlation. Deeply etched silicon rib waveguides with distributed Bragg reflectors are suitable candidates for miniaturization of sensing elements, replacing the conventional FBG. Main objective here is to investigate the effect of non-uniform strain localization on the sensor output. Computational analysis is done to determine the static and dynamic strain sensing characteristics of the 1D photonic crystal based sensor. The structure is designed and modeled using Finite Element Method. Dynamic localization of strain field is observed. The distributed strain field is used to calculated the PC waveguide response. The sensitivity of the proposed sensor is estimated to be 0.6 pm/με.
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