Prof. Sergiy V. Kondratenko Profile

Prof. Sergiy V. Kondratenko

Professor at Taras Shevchenko National University of Kyiv

SPIE Involvement:

Author | Student Chapter Advisor

Publications (9)

Proceedings Article | 5 March 2021 Presentation + Paper

Lateral photoconductivity of GeSn alloys

Serhii Derenko, Serhiy Kondratenko, Oleksandr Datsenko, Yuriy Mazur, Shui-Qing Yu, Gregory Salamo

Proceedings Volume 11680, 1168008 (2021) https://doi.org/10.1117/12.2583072

KEYWORDS: Tin, Silicon, Germanium, Thin films, Semiconductors, Photoresistors, Optoelectronic devices, Infrared radiation, Heterojunctions, Crystals

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Proceedings Article | 5 October 2015 Presentation

Photovoltage transients in GaAs/InGaAs solar cells (Presentation Recording)

Roman Holubenko, Artem Yakovliev, Sergey Kondratenko

Proceedings Volume 9562, 956205 (2015) https://doi.org/10.1117/12.2187066

KEYWORDS: Indium gallium arsenide, Solar cells, Gallium arsenide, Solar energy, Photovoltaics, Molecular beam epitaxy, Quantum wells, Temperature metrology, Video, Current controlled current source

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Proceedings Article | 1 June 2015 Paper

Generation-recombination processes in InGaAs/GaAs heterostructures with one-dimensional nanostructures

Marianna Kovalova, Serhiy Kondratenko, Artem Yakovlev, Colin Furrow, Vasyl Kunets, Morgan Ware, Gregory Salamo

Proceedings Volume 9519, 95190W (2015) https://doi.org/10.1117/12.2178684

KEYWORDS: Gallium arsenide, Indium gallium arsenide, Solar cells, Heterojunctions, Quantum dots, Quantum efficiency, Nanostructures, Silicon, Doping, Temperature metrology

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Proceedings Article | 28 August 2014 Paper

Surface potential and field effect in structures with Ge-nanoclusters grown on Si(100) surface

Yu. Hyrka, S. Kondratenko

Proceedings Volume 9170, 91701C (2014) https://doi.org/10.1117/12.2061093

KEYWORDS: Silicon, Germanium, Heterojunctions, Quantum dots, Optoelectronics, Raman spectroscopy, Epitaxy, Interfaces, Optoelectronic devices, Semiconductors

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Proceedings Article | 2 May 2014 Paper

Photocurrent spectroscopy of Ge nanoclusters grown on oxidized silicon surface

A. Mykytiuk, S. Kondratenko, V. S. Lysenko, Yu. Kozyrev

Proceedings Volume 9126, 91263J (2014) https://doi.org/10.1117/12.2054169

KEYWORDS: Silicon, Germanium, Interfaces, Electrons, Oxides, Temperature metrology, Quenching (fluorescence), Spectroscopy, Scanning electron microscopy, Heterojunctions

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Proceedings Article | 2 May 2014 Paper

Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures

Marianna Kovalova, Serhiy Kondratenko, Colin Furrow, Vasyl Kunets, Morgan Ware, Gregory Salamo

Proceedings Volume 9126, 91262H (2014) https://doi.org/10.1117/12.2051881

KEYWORDS: Gallium arsenide, Heterojunctions, Solar cells, Indium gallium arsenide, Nanostructures, Quantum dots, Quantum efficiency, Absorption, Modulation, Semiconductors

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Proceedings Article | 18 August 2005 Paper

Photoconductivity spectra of nanodimensional structures on c-Si and GaAs substrates

Ruslana Udovitskaya, Sergey Kondratenko, Oleg Vakulenko

Proceedings Volume 5931, 59311E (2005) https://doi.org/10.1117/12.618701

KEYWORDS: Germanium, Gallium arsenide, Photodiodes, Silicon, Semiconductors, Diffusion, Diodes, Infrared radiation, Nanostructures, Absorption

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The photoconductivity spectra of the structure nanodimensional Ge/c-Si with Ge quantum wells on a single-crystal substrate surface were measured using infrared spectrophotometer IR-12. The same measurements were also made for the structures Al0.2Ga0.8As/In0.1Ga0.9As/GaAs with further comparison of received results to standard GaAs photodiode. The photoconductivity spectrum of nanodimensional Ge/c-S i structure was received at room temperature. The investigated samples are made by molecular - beam epitaxy method. rectangular frame type (5x5 micron) contact was generated on a surface of Ge layer. The thickness of a contact strip was equaled to 0,5 micron. The second contact was soldered to the back side of the singlecrystal surface. A shifting voltage U =1,5 V was switched in the opposite direction (negative potential to Ge slice) At measurements of photoconductivity of structure. It is necessary to note that photoconductive signal was 3 orders less, than at inverse displacement. It specifies presence heterotransitions between Ge and c-S i layer. The photosensitivity of a standard silicon photodiode was investigated for comparison of such assumption. For example the spectral dependence of photosensitivity of standard silicon photodiode FD-142Κ is represented. The spectral position of a photoconductivity curve was the same to standard silicon photodiode at room temperature. The value of photosensitivity of a researched sample was compared with the standard photodiode. Is established, that both these values are of the same order. It is possible to explain it by presence of a potential barrier between Ge and Si. It is known that longwave border of photoconductivity is defined by width of the forbidden zone of the semiconductor. The increase of photoconductivity is caused by increase of absorption at rising of quantums energy of the exited radiation (at reduction of wavelength). The form of a photoconductivity spectrum of the photodiode FD-142Κ and absence of a hole in the spectrum in short-wave area (1,5-2,1 μm) specifies that the speed of a surface recombination is equal to zero. For the structure nanodimensional Ge/ c-S i, otherwice, significant hole in this area was observed at the room temperature. So, samples had the large speed of surface recombination. To observe the contribution of nonequilibrium charge carriers to the photoconductivity of structure nanodimensional Ge/c-Si it is necessary to cool down to Τ < 100 K. The intersubband transitions can occur in nanodimensional Ge at such temperatures. So, it is necessary to expect observation of a photosensitivity in the infrared, which corresponds energy of these transitions. It is possible to explain photosensitivity of nanostructures by existence of interzoned transitions in nanodimension Ge. The spectral dependence of photosensitivity of structure nanodimension Ge/c-Si in IR- of area is received. Analysis of received results have shown that the spectrum Al0.2Ga0.8As/In0.1Ga0.9As/GaAs differs from standard GaAs photodiode by wider spectral sensitivity range owing to creation of nanodimensional layers Al0.2Ga0.8As/In0.1Ga0.9As on the GaAs substrate. It gives the possibility to detect optical irradiation.

Proceedings Article | 16 May 2005 Paper

Photoconductivity of structures nanodimensional Ge/c-Si.

Ruslana Udovitskaya, Sergey Kondratenko, Oleg Vakulenko

Proceedings Volume 5763, (2005) https://doi.org/10.1117/12.602101

KEYWORDS: Germanium, Photodiodes, Electron transport, Silicon, Semiconductors, Diffusion, Infrared radiation, Amplifiers, Infrared spectroscopy, Absorption

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The spectral dependence of photoconductivity of structure nanodimensional Ge/c-Si was measured on infrared spectrophotometer DCS-12 which contains Ge quantum holes on a surface of single-crystal substrate. The photoconductivity spectrum of nanodimensional Ge/c-Si structure was received at room temperature. The investigated samples are made by molecular-beam epitaxy method, rectangular frame type (5x5 micron) contact was generated on a surface of Ge layer. The thickness of a contact strip was equaled to 0,5 micron. The second contact was soldered to the back side of the singlecrystal surface. A shifting voltage of U = 1,5 V was switched in the opposite direction (negative potential to Ge slice) At measurements of photoconductivity of structure. It is necessary to note that photoconductive signal was 3 orders less, than at inverse displacement. It specifies presence heterotransitions between Ge and c-Si layer. The photosensitivity of a standard silicon photodiode was investigated for comparison of such assumption. For example the spectral dependence of photosensitivity of standard silicon photodiode ΦB-142K is represented. The spectral position of a photoconductivity curve was the same to standard silicon photodiode at room temperature. The value of photosensitivity of a researched sample was compared with the standard photodiode. Is established, that both these values are of the same order. It is possible to explain it by presence of a potential barrier between Ge and Si. It is known that longwave border of photoconductivity is defined by width of the forbidden zone of the semiconductor. The increase of photoconductivity is caused by increase of absorption at rising of quantums energy of the exited radiation (at reduction of wavelength). The form of a photoconductivity spectrum of the photodiode ΦB-142K and absence of a hole in the spectrum in short-wave area (1,5-2,1 micron) specifies that the speed of a surface recombination is equal to zero. For the structure nanodimensional Ge/c-Si, otherwise, significant hole in this area was observed at the room temperature. So, samples had the large speed of surface recombination. To observe the contribution of nonequilibrium charge carriers to the photoconductivity of structure nanodimensional Ge/c-Si it is necessary to cool down to T < 100 Κ. The intersubband transitions can occur in nanodimensional Ge at such temperatures. So, it is necessary to expect observation of a photosensitivity in the infrared, which corresponds energy of these transitions. It is possible to explain photosensitivity of nanostructures by existence of interzoned transitions in nanodimension Ge. The spectral dependence of photosensitivity of structure nanodimensional Ge/c-Si in IR- of area is received.

Proceedings Article | 22 October 2004 Paper

Photoelectric properties of crystalline silicon: theory and application

Ruslana Udovitskaya, Sergey Kondratenko, Oleg Vakulenko

Proceedings Volume 5564, (2004) https://doi.org/10.1117/12.566064

KEYWORDS: Silicon, Crystals, Luminescence, Photovoltaics, Absorption, Diffusion, Surface finishing, Heterojunctions, Semiconductors, Interfaces

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