We present investigations of the fin-shaped GaN/AlGaN field effect transistors with two lateral Schottky barrier gates exactly placed on the edges of the fin-shaped transistor channel. We call this kind of FinFET modification the EdgeFET. It allowed us to efficiently control the current flow in two-dimensional electron gas conduction channel. We present experimental data of sub-THz detection by EdgeFETs. Control of the side gates allows changing the width of two-dimensional electron gas and forming a wire, as we expect should be beneficial for observation of terahertz plasma wave resonances. This paves the way towards future terahertz optopair using high-quality factor plasma wave resonances, for which it is necessary to eliminate oblique modes. We report also on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects should be beneficial for observation of resonant emission.
KEYWORDS: Plasma, Field effect transistors, Terahertz radiation, Heterojunctions, Fin field effect transistors, Transistors, Terahertz detection, Gallium nitride, Temperature metrology
We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors with two lateral Schottky barrier gates exactly placed on the edges of the fin-shaped transistor channel. This kind FinFET modification (EdgeFET) allowed us to efficiently control the current flow in two-dimensional electron gas conduction channel. We present experimental data of sub THz detection by EdgeFETs. We describe also how it is beneficial for observation of resonant plasma wave THz detection and emission.
We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors (FinFETs) with two lateral Schottky barrier gates exactly placed at the edges of the fin-shaped transistor channel. This kind of FinFET modification (called EdgeFET) allowed us to efficiently control the current flow in two-dimensional electron gas conduction channel. Moreover, due to depletion, regions of the channel at a certain range of reverse bias form a nanowire, which is beneficial for the tunable resonant THz detection. Our studies of current-voltage characteristics and response in the sub-terahertz frequency range confirm the validity of the approach.
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