Thin-film transistors deliberately comprising rectifying source contacts have attractive properties for sensor and driver circuits: high performance uniformity and geometrical tolerance; superior saturation; and high intrinsic gain. The paper reviews the source-gated and multimodal thin-film transistor configurations, and presents their proposed applications to ultra-compact sensing and data processing circuits. Source-gated transistors with nanoscale tunneling contacts offer an alternative to the Schottky-contact fabrication route, which presents processing challenges. Emerging multimodal transistors overcome limitations of traditional contact-controlled devices and add to the list of useful properties: high gain or constant transconductance by design; immunity to drain voltage variations in floating gate configuration; and a significantly faster response time than source-gated transistors. These devices form the foundation for the design of compact, yet extremely versatile, thin-film circuits for sensing, signal conditioning and signal conversion. Finally, a vision is presented in which the properties of these circuits will be essential to convey seamless user interactivity to physical objects, transforming them into intuitive user interfaces beyond traditional displays screens.
The dynamic increase in terahertz photoconductivity resulting from energetic intraband relaxation was used to track the formation of highly mobile charges in thin films of the tin iodide perovskite Cs1-xRbxSnI3 and compared to the lead based Cs0:05(FA0:83MA0:17)0:95Pb(I0:83Br0:17)3. Energy relaxation times were found to be around 500 fs, comparable to those in GaAs and longer than the ones of the lead-based perovskite (around 300 fs). At low excess energies the efficient intraband relaxation can be understood within the context of the Frohlich electron-phonon interaction. For higher excess energies the photoconductivity rise time lengthens in accordance with carrier injection higher in the bands, or into multiple bands. The findings contribute to the development of design rules for photovoltaic devices capable of extracting hot carriers from perovskite semiconductors.
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