Epitaxy can be used to direct nanowire chemical vapor deposition and to influence the crystallographic orientation of
nanowires during their nucleation and growth via the vapor-liquid-solid mechanism. Under some circumstances, the
influence of epitaxy competes with capillary effects and the influence of nanoparticle catalyst coarsening and surface
impurities on nanowire orientation selection. We have investigated rapid thermal chemical vapor deposition of epitaxial
Ge nanowires and have used it to separately study nanowire nucleation and growth. This has given important insights
into deep-subeutectic Ge nanowire growth using Au catalyst particles. These Ge nanowires have also been studied as the
cores in epitaxial Ge core/Si shell nanowires. We have studied the conditions under which strain driven surface
roughening and dislocations formation occurs in these coaxial nanowire heterostructures. Recent results indicate that
suppression of Si shell surface roughening can lead to fully strained, coherent core/shell nanowires.
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