A time domain model for reflective semiconductor optical amplifiers (RSOAs) is developed based on the carrier rate
equation and wave propagation equation. In this model, the gain saturation effect and the dependence of spontaneous
carrier lifetime on carrier density are explicitly included, and the evolution of carrier density and the optical power in
time and space under current modulation is considered in detail. Using the time domain model, the performance of
RSOAs with different active layer lengths is investigated under different inject current densities and input optical
powers. Numerical simulations reveal that the carrier spontaneous lifetime is the foremost limiting factor of RSOA
modulation speed, but increasing photon density improves RSOA performance. With increased bias currents or optical
input powers, the small signal frequency response is improved and the eye closure penalty under large signal on-off key
modulation is reduced, but the extinction ratio of the optical output signal is decreased. Under the same bias current
density and optical input power, RSOAs with longer active layers exhibit improved frequency response and smaller eye
closure penalty.
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