We have developed an uncooled infrared radiation focal plane array (IR-FPA) with 22 μm pitch and 320 × 240 pixels
utilizing silicon p-n junction diodes, which were fabricated by 0.13 μm CMOS technology and bulk-micromachining.
The thermal time response of cells was lowered to be 16msec by reduction of thermal capacity of cells. In addition to
increase the sensitivity of cells by extending the length of supporting beams, p-n junction diode was scaled down as
small as 20% in area compared to previous one. Micro-holes were formed in the cell to reduce only thermal capacity,
which were negligibly small compared to incident IR wavelength. This method needs no additional process step and is
considered as suitable for low cost and mass-productive IR-FPA.
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