We proposed a solid=state image sensor with multi=layered structure on the basis of the combination of a charge read-out
circuit with photoelectric conversion layers, which behave in similar fashion to sensitizing dyes in color films. We
developed an organic photoelectric conversion layer, which selectively absorbs green light and transmits blue and red
lights. By overlaying this layer on a silicon substrate having silicon photodiodes and a read-out circuit, we successfully
produced a two-color sensor. Significant reduction in the dark current in the photoelectric conversion layer owing to
appropriate carrier-blocking layers made it possible to take pictures with low level of noise.
At EI2006, we proposed the CMOS image sensor, which was overlaid with organic photoconductive layers in
order to incorporate in it large light-capturing ability of a color film owing to its multiple-layer structure, and
demonstrated the pictures taken by the trial product of the proposed CMOS image sensor overlaid with an organic layer
having green sensitivity. In this study, we have tried to get the optimized spectral sensitivity for the proposed CMOS
image sensor by means of the simulation to minimize the color difference between the original Macbeth chart and its
reproduction with the spectral sensitivity of the sensor as a parameter. As a result, it has been confirmed that the
proposed CMOS image sensor with multiple-layer structure possesses high potential capability in terms of imagecapturing
efficiency when it is provided with the optimized spectral sensitivity.
Digital still cameras overtook film cameras in Japanese market in 2000 in terms of sales volume owing to their versatile functions. However, the image-capturing capabilities such as sensitivity and latitude of color films are still superior to those of digital image sensors. In this paper, we attribute the cause for the high performance of color films to their multi-layered structure, and propose the solid-state image sensors with stacked organic photoconductive layers having narrow absorption bands on CMOS read-out circuits.
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