We propose and theoretically analyze a DFB semiconductor laser monolithically integrated with anti-symmetric Bragg grating (ASBG) modulator. A π phase shifted Bragg grating with single-mode ridge waveguide and an ASBG with multimode waveguide supporting the fundamental transverse electric (TE0) mode and the first order transverse electric (TE1) mode, are joined by a tapered waveguide. After adding a phase shift section between the taper and ASBG, the electro-optical (E/O) response of ASBG modulator increases by 37.9% compared to the normal Bragg grating modulator (BGM), and becomes sensitive to the effective refractive index change of the straight waveguide. The proposed integrated device can be applied in sensing.
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