This work reports the optoelectronic characteristics of the graphene/MAPbI3/TiO2/Si heterostructure and graphene/Pb2/porous Si heterostructure for light-emitting devices with low cost. The XRD diagrams of these two heterostructures show three main peaks at the position of 14.1°, 28.4°, and 31.9°, which correlate with (110), (220), and (310) planes of the MAPbI3 perovskite phase. The PL spectra of these two heterostructures demonstrated three peaks located at 382, 566, and 766 nm. They are corresponding to the emission of B-B transition of TiO2, defects in the TiO2, and B-B transition of MAPbI3. One peak of the EL spectrum of the graphene/MAPbI3/TiO2/porous Si heterostructure operated under the injection current of 10 mA located at around 800 nm was observed.
This work proposes a novel white light device consisted of a yttrium aluminum garnet (YAG) phosphor-doped zinc oxide (ZnO) (ZnO:YAG) thin film deposited on a indium tin oxide (ITO) glass substrate by ultrasonic spray pyrolysis. Characteristics of the ZnO:YAG (YAG at 1, 5, and 10 wt%) film on ITO glass substrates were examined by x-ray diffraction (XRD) pattern, hall measurement, and photoluminescence (PL) pattern spectra. The color of the PL spectra of the yttrium-aluminum garnet (YAG) phosphor-doped zinc oxide (ZnO) thin films under excitation of He-Cd laser with wavelength of 325 nm is nearly white.
This study presents a GaN thin film light-emitting diode (TF-LED) on an electroplated flexible copper substrate to improve thermal conduction effect of the LED. The optoelectronic characteristics and stress effect of the GaN TF-LEDs on the electroplated flexible copper prepared by laser lift-off technique was examined. The surface of the peeled GaN TF-LED after laser lift-off process demonstrated a pore array. The GaN pore array surface was etched by photo-electrochemical method to form hexagonal pyramid hillocks on the surface using KOH solution. Then, freestanding peeled GaN TF-LEDs with the front surface protected by wax were immersed into 3M KOH solution at 10, 20, 30min under ultraviolet illuminations to perform the photo-electrochemical etching. Surface morphologies with and without photo-electrochemical etching were observed by field emission scanning electron microscope (FESEM) (LEO 1530).
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