In this paper, we review our recent development and validation of the ultrasensitive electronic biomolecular assays enabled by our novel amplifying nanowire field-effect transistor (nwFET) biosensors. Our semiconductor nwFET biosensor platform technology performs extreme proximity signal amplification in the electrical domain that requires neither labeling nor enzymes nor optics. We have designed and fabricated the biomolecular assay prototypes and developed the corresponding analytical procedures. We have also confirmed their analytical performance in quantitating key protein biomarker in human serum, demonstrating an ultralow limit of detection and concurrently high output current level for the first time.
In order to sustain the historic progress in information processing, transmission, and storage, concurrent integration of heterogeneous functionality and materials with fine granularity is clearly imperative for the best connectivity, system
performance, and density metrics. In this paper, we review recent developments in heterogeneous integration of epitaxial nanostructures for their applications toward our envisioned device-level heterogeneity using computing nanofabrics. We first identify the unmet need for heterogeneous integration in modern nanoelectronics and review state-of-the-art assembly approaches for nanoscale computing fabrics. We also discuss the novel circuit application driver, known as Nanoscale Application Specific Integrated Circuits (NASICs), which promises an overall performance-power-density advantage over CMOS and embeds built-in defect and parameter variation resilience. At the device-level, we propose an innovative cross-nanowire field-effect transistor (xnwFET) structure that simultaneously offers high performance, low parasitics, good electrostatic control, ease-of-manufacturability, and resilience to process variation. In addition, we specify technology requirements for heterogeneous integration and present two wafer-scale strategies. The first strategy is based on ex situ assembly and stamping transfer of pre-synthesized epitaxial nanostructures that allows tight control over key nanofabric parameters. The second strategy is based on lithographic definition of epitaxial nanostructures on native substrates followed by their stamping transfer using VLSI foundry processes. Finally, we demonstrate the successful concurrent heterogeneous co-integration of silicon and III-V compound semiconductor epitaxial nanowire arrays onto the same hosting substrate over large area, at multiple locations, with fine granularity, close proximity and high yield.
For over one decade, numerous research have been performed on field-effect transistor (FET) sensors with a quasi-onedimensional
(1D) nanostructure channel demonstrating highly sensitive surface and bulk sensing. The high surface and
bulk sensing sensitivity respectively arises from the inherently large surface area-to-volume ratio and tiny channel
volume. The generic nanowire FET sensors, however, have limitations such as impractically low output current levels
especially near the limit of detection (LOD) that would require downstream remote amplification with an appreciable
amount of added noise. We have recently proposed and experimentally demonstrated an innovative amplifying nanowire
FET sensor structure that seamlessly integrates therein a sensing nanowire and a nanowire FET amplifier. This novel
sensor structure embraces the same geometrical advantage in quasi-1D nanostructure yet it offers unprecedented closeproximity
signal amplification with the lowest possible added noise. In this paper, we review the device operating
principle and amplification mechanism. We also present the prototype fabrication procedures, and surface and bulk
sensing experimental results showing significantly enhanced output current level difference as predicted.
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