Dr. Koh Matsumoto Profile

Dr. Koh Matsumoto

SPIE Involvement:

Conference Program Committee | Author

Proceedings Article | 14 March 2023 Presentation + Paper

Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source

Koh Matsumoto, Kazuki Ohnishi, Hiroshi Amano

Proceedings Volume 12441, 1244104 (2023) https://doi.org/10.1117/12.2647336

KEYWORDS: Gallium nitride, Indium gallium nitride, Magnesium, Light emitting diodes, Doping, Design and modelling, Indium, Gallium arsenide, Gallium, Temperature metrology

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Proceedings Article | 5 March 2021 Presentation

Current development status of MOCVD and its process for UVLED application towards post COVID-19

Akinori Ubukata, Yoshiki Yano, Junya Yoshinaga, Tadanobu Arimura, Shuichi Koseki, Koh Matsumoto

Proceedings Volume 11706, 117060L (2021) https://doi.org/10.1117/12.2585099

KEYWORDS: Metalorganic chemical vapor deposition, Ultraviolet radiation, Mercury (planet), Light emitting diodes, Lamps, Contamination, Chlorine, Sapphire, Optical components, Nitrogen

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Proceedings Article | 25 February 2020 Presentation + Paper

Challenges and opportunities of MOVPE and THVPE/HVPE for nitride light emitting device

K. Matsumoto, A. Yamaguchi, Y. Yano, H. Tokunaga, A. Mishima, Y. Tomita, Y. Yamaoka, S. Koseki, T. Arimura

Proceedings Volume 11302, 113020N (2020) https://doi.org/10.1117/12.2543943

KEYWORDS: Gallium nitride, Light emitting diodes, Aluminum nitride, Semiconducting wafers, Sapphire, Crystals, Quantum wells, Indium, External quantum efficiency, Annealing

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Proceedings Article | 23 February 2018 Paper

Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere

Akira Mishima, Yuji Tomita, Yoshiki Yano, Toshiya Tabuchi, Koh Matsumoto, Hideto Miyake

Proceedings Volume 10532, 1053204 (2018) https://doi.org/10.1117/12.2292182

KEYWORDS: Aluminum nitride, Annealing, Sapphire, Semiconducting wafers, Nitrogen, Scanning electron microscopy, Atomic force microscopy, Crystals, Carbon, Reflection

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Proceedings Article | 23 February 2012 Paper

High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput

Koh Matsumoto, Akinori Ubukata, Kazutada Ikenaga, Kazuki Naito, Jun Yamamoto, Yoshiki Yano, Toshiya Tabuchi, Akira Yamaguchi, Yuzaburo Ban, Kosuke Uchiyama

Proceedings Volume 8262, 826202 (2012) https://doi.org/10.1117/12.903642

KEYWORDS: Silicon, Gallium nitride, Aluminum nitride, Semiconducting wafers, Laser sintering, Aluminum, Epitaxy, Silicon carbide, Light emitting diodes, Switching

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Proceedings Article | 9 November 1999 Paper

Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure

Yong Hou, Kie Teo, Ming Fu Li, Kazuo Uchida, Hiroki Tokunaga, Nakao Akutsu, Koh Matsumoto

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369390

KEYWORDS: Gallium nitride, Excitons, Sapphire, Solar energy, Piezoelectric effects, Solids, Temperature metrology, Aluminum, Modulation, Semiconductors

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Proceedings Article | 22 June 1998 Paper

Phonon-assisted photoluminescence in wurtzite GaN epilayer

Wei Liu, Ming Fu Li, ShiJie Xu, Kazuo Uchida, Koh Matsumoto

Proceedings Volume 3419, 341905 (1998) https://doi.org/10.1117/12.311027

KEYWORDS: Excitons, Luminescence, Gallium nitride, Compound semiconductors, Phonons

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Showing 5 of 7 publications

Conference Committee Involvement (18)

Gallium Nitride Materials and Devices XX

27 January 2025 | San Francisco, California, United States

Light-Emitting Devices, Materials, and Applications XXIX

27 January 2025 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIX

29 January 2024 | San Francisco, California, United States

Light-Emitting Devices, Materials, and Applications XXVIII

29 January 2024 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVIII

30 January 2023 | San Francisco, California, United States

Light-Emitting Devices, Materials, and Applications XXVII

30 January 2023 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVII

24 January 2022 | San Francisco, California, United States

Light-Emitting Devices, Materials, and Applications XXVI

24 January 2022 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVI

6 March 2021 | Online Only, California, United States

Light-Emitting Devices, Materials, and Applications XXV

6 March 2021 | Online Only, California, United States

Gallium Nitride Materials and Devices XV

4 February 2020 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIV

4 February 2019 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIII

29 January 2018 | San Francisco, California, United States

Gallium Nitride Materials and Devices XII

30 January 2017 | San Francisco, California, United States

Gallium Nitride Materials and Devices XI

15 February 2016 | San Francisco, California, United States

Gallium Nitride Materials and Devices X

9 February 2015 | San Francisco, California, United States

Gallium Nitride Materials and Devices IX

3 February 2014 | San Francisco, California, United States

Gallium Nitride Materials and Devices VIII

4 February 2013 | San Francisco, California, United States

Showing 5 of 18 Conference Committees

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