Prof. Kenneth Emmanuel Gonsalves Profile

Prof. Kenneth Emmanuel Gonsalves

Visiting Professor

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Author

Publications (28)

SPIE Journal Paper | 27 December 2022

Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

Manvendra Chauhan, Kumar Palit, Sumit Choudhary, Satinder Sharma, Kenneth Gonsalves

JM3, Vol. 21, Issue 04, 044603, (December 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.4.044603

KEYWORDS: Extreme ultraviolet lithography, Electron beam lithography, Extreme ultraviolet, Silicon, Etching, Optical lithography, Thin films, Line edge roughness, Deep ultraviolet, Logic

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Proceedings Article | 22 February 2021 Presentation + Paper

Development of metal-organic cluster based negative tone resist: pre-screened through the helium-ion beam prelude to extreme ultraviolet lithography (EUVL) applications

Satinder Sharma, Manvendra Chauhan, Rudra Kumar, Kumar Palit, Sumit Choudhary, Kenneth Gonsalves

Proceedings Volume 11612, 1161208 (2021) https://doi.org/10.1117/12.2583850

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EUV lithography (EUVL) is expected to offer a single-exposure solution down to 5 nm or below nodes. To successfully implement EUVL for sub-10 nm nodes on time, one major hurdle is the availability of compatible resists with sufficiently low line edge/width roughness (LER/LWR) and low exposure dose. Hence, the requirements of high-resolution patterning along with sub 10 nm feature size necessitates nanocluster size resist materials with high irradiation absorption coefficients, considerably high sensitivity, and permissible LER and LWR. To meet the aforementioned requirements, we formulated a negative tone metal-core (indium and copper) organic clusters resists such as In-MOCs and Cu-MOCs having a nanosize domain. In-MOCs is comprised of indium core as an inorganic metal building unit and methacrylic acid (MAA) as an organic ligand while the Cu-MOCs is comprised of copper metal core and trans 2,3 dimethylacrylic acid (DMA) organic ligand through the versatile sol-gel method. The incorporation of indium and copper metal provides the enhanced absorption of irradiation beams, while the MAA and DMA in the formulated resist showing radical polymerization could be easily crosslinked through the carbon-carbon bond with the minimal amount of exposure dose of He⁺ ions to form a negative tone resist. The designed resists exhibit a significantly higher sensitivity of ~12.76 μC/cm² and ~14.93 μC/cm² towards the helium ion beam for In-MOCs and Cu-DMA resists, respectively. The well-resolved half-pitch features of ~13 nm and the minimum line width of ~11 nm L/2S with the substantial helium-ion dose of ~30 μC/cm² for In-MOCs resist, whereas, the well-resolved high resolution (HR) ~ 10 nm half-pitch (HP) and ~9 nm (L/2S) line patterns at a considerable He⁺ dose of ~35 μC/cm² for Cu-DMA resist. The calculated LER and LWR for 13 nm half-pitch patterns are 2.56 ± 0.06 nm and 2.48 ± 0.08 nm, respectively for In-MOCs resist, while the computed line edge roughness (LER), line width roughness (LWR) for HR~10 nm (HP) line patterns are 2.24 ± 0.08 nm and 3.1 ± 0.09 nm, respectively for Cu-DMA resist.

Proceedings Article | 26 March 2020 Presentation + Paper

All-new nickel-based Metal Core Organic Cluster (MCOC) resist for N7+ node patterning

Satinder Sharma, Rudra Kumar, Manvendra Chauhan, Mohamad Moinuddin, Jerome Peter, Subrata Ghosh, Chullikkattil Pradeep, Kenneth Gonsalves

Proceedings Volume 11326, 1132604 (2020) https://doi.org/10.1117/12.2552189

KEYWORDS: Electron beam lithography, Nickel, Metals, Etching, Line edge roughness, Line width roughness, Silicon, Helium, Resistance, Thin films

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Proceedings Article | 23 March 2020 Paper

Focusing on nanoparticles-based photomultiplier in n-CARs

Satinder Sharma, Mohamad Moinuddin, Midathala Yogesh, Shivani Sharma, Manoj Sahani, Subrata Ghosh, Kenneth Gonsalves

Proceedings Volume 11326, 113261C (2020) https://doi.org/10.1117/12.2552190

KEYWORDS: Nanoparticles, Electron beam lithography, Silver, Line edge roughness, Helium, Photomultipliers, Extreme ultraviolet, Lithography, Absorbance, Ions

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Proceedings Article | 19 March 2018 Paper

Evaluation of high-resolution and sensitivity of n-CAR hybrid resist for sub-16nm or below technology node

Satinder Sharma, Mohamad Ghulam Moinuddin, Pulikanti Guruprasad Reddy, Chullikkattil Pradeep, Subrata Ghosh, Kenneth Gonsalves

Proceedings Volume 10583, 105831Q (2018) https://doi.org/10.1117/12.2297565

KEYWORDS: Electron beam lithography, Extreme ultraviolet lithography, Thin films, Lithography, Line edge roughness, Line width roughness, Tin, Resolution enhancement technologies, Photoresist developing, Atomic force microscopy

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Proceedings Article | 19 March 2018 Paper

Helium ion active hybrid non-chemically amplified resist (n-CAR) for sub-10 nm patterning applications

Satinder Sharma, Pulikanti Guruprasad Reddy, Mohamad Ghulam Moinuddin, Subrata Ghosh, Chullikkattil Pradeep, Kenneth Gonsalves

Proceedings Volume 10584, 1058409 (2018) https://doi.org/10.1117/12.2297537

KEYWORDS: Ions, Electron beam lithography, Monte Carlo methods, Helium, Thin films, Electrons, Line edge roughness, Lithography, Optical lithography, Line width roughness

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SPIE Journal Paper | 16 October 2014

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

Vikram Singh, Vardhineedi Sri Venkata Satyanarayana, Nikola Batina, Israel Morales Reyes, Satinder Sharma, Felipe Kessler, Francine Scheffer, Daniel Weibel, Subrata Ghosh, Kenneth Gonsalves

JM3, Vol. 13, Issue 04, 043002, (October 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.4.043002

KEYWORDS: Extreme ultraviolet lithography, Polymers, Photoresist materials, Extreme ultraviolet, Electron beam lithography, Etching, Line edge roughness, Resistance, Silicon, Lithography

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Proceedings Article | 17 April 2014 Paper

Optimization of processing parameters and metrology for novel NCA negative resists for NGL

Vikram Singh, V. S. V. Satyanarayana, Felipe Kessler, Francine Scheffer, Daniel Weibel, Satinder Sharma, Subrata Ghosh, Kenneth Gonsalves

Proceedings Volume 9048, 90481Y (2014) https://doi.org/10.1117/12.2045882

KEYWORDS: Etching, Electron beam lithography, Resistance, Extreme ultraviolet lithography, Extreme ultraviolet, Polymers, Thin films, Lithography, Surface roughness, Silicon

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Proceedings Article | 17 April 2014 Paper

Design and synthesis of novel resist materials for EUVL

V. S. V. Satyanarayana, Vikram Singh, Subrata Ghosh, Satinder Sharma, Kenneth Gonsalves

Proceedings Volume 9048, 90481W (2014) https://doi.org/10.1117/12.2045736

KEYWORDS: Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Polymers, Polymerization, Silicon, Semiconducting wafers, Electron beam lithography, Line edge roughness, Scanning electron microscopy

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Proceedings Article | 27 March 2014 Paper

Organic-inorganic hybrid resists for EUVL

Vikram Singh, Vishwanath Kalyani, V. S. Satyanarayana, Chullikkattil Pradeep, Subrata Ghosh, Satinder Sharma, Kenneth Gonsalves

Proceedings Volume 9051, 90511W (2014) https://doi.org/10.1117/12.2041907

KEYWORDS: Polymethylmethacrylate, Photoresist materials, Polymers, Molybdenum, Medium wave, Extreme ultraviolet lithography, Etching, Resistance, Photoresist developing, Electron beam lithography

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Proceedings Article | 27 March 2014 Paper

Novel non-chemically amplified (n-CARs) negative resists for EUVL

Vikram Singh, V. S. Satyanarayana, Satinder Sharma, Subrata Ghosh, Kenneth Gonsalves

Proceedings Volume 9051, 905106 (2014) https://doi.org/10.1117/12.2041183

KEYWORDS: Extreme ultraviolet lithography, Electron beam lithography, Extreme ultraviolet, Polymers, Chemically amplified resists, Etching, Lithography, Line edge roughness, Resistance, Photoresist materials

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Proceedings Article | 15 April 2008 Paper

Effect of PAG and matrix structure on PAG acid generation behavior under UV and high-energy radiation exposure

Cheng-Tsung Lee, Mingxing Wang, Kenneth Gonsalves, Wang Yueh, Jeanette Roberts, Todd Younkin, Clifford Henderson

Proceedings Volume 6923, 69232F (2008) https://doi.org/10.1117/12.782634

KEYWORDS: Polymers, Polymer thin films, Ionization, Picosecond phenomena, Deep ultraviolet, Absorption, Photoresist materials, Molecules, Matrices, Photolysis

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Chemically amplified resists (CAR) have successfully facilitated the development of deep ultra-violet (DUV) and 193 nm lithography techniques for more than two decades due to their acid-catalyzed deprotection scheme that enhances their photospeed. This acid-catalyzed mechanism provides a method for amplifying the initial chemical reactions caused by interaction of radiation with the resist film, thus making each interaction event between radiation and resist more productive. However, when switching from low energy photolysis to high energy radiolysis, changes in the manner in which the radiation interacts with the resist material can alter the acid generation efficiency and mechanism of PAG excitation. In high energy radiation cases where the radiation energy exceeds the ionization potential of the PAG and the polymer resin, the radiation absorption in the resist film becomes non-selective. The ratio of PAG excited by direct excitation as compared to polymer or matrix sensitization pathways can shift heavily in favor of matrix sensitization in such high energy exposure cases. Such sensitization pathways may become a potential method for enhancing resist sensitivity under high energy radiation through careful selection of matrix and PAG materials. A better understanding and study the efficiency of acid generation through direct and indirect PAG excitation pathways and the effect of PAG and matrix structure on these pathways would be extremely valuable for the design of future high sensitivity resist materials. In this work, the acid generation of typical ionic (onium salt) and non-ionic PAGs under DUV (248 nm) and electron-beam exposure in polymer film have been studied. The effect of PAG type and structure on its acid generation under photolysis and radiolysis has been determined. The effect of polymer resin structure on PAG photoacid generation under photolysis and radiolysis has also been investigated. Concepts for PAG and polymer design for producing enhanced sensitivity resists for excitational and ionizational exposure is discussed.

Proceedings Article | 26 March 2008 Paper

Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography

Mingxing Wang, Cheng-Tsung Lee, Clifford Henderson, Wang Yueh, Jeanette Roberts, Kenneth Gonsalves

Proceedings Volume 6923, 692312 (2008) https://doi.org/10.1117/12.769004

KEYWORDS: Polymers, Absorption, Extreme ultraviolet lithography, Deep ultraviolet, Lithography, Line edge roughness, Polymer thin films, NOx, Silicon, Scanning electron microscopy

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Proceedings Article | 26 March 2008 Paper

High refractive-index resists composed of anionic photoacid generator (PAG) bound polymers for 193 nm immersion lithography

Kenneth Gonsalves, Mingxing Wang, Narahari Pujari

Proceedings Volume 6923, 69231P (2008) https://doi.org/10.1117/12.770458

KEYWORDS: Polymers, Nanoparticles, Refractive index, Nanocomposites, Immersion lithography, Particles, Zinc, Lead, Metals, Lithography

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Proceedings Article | 23 March 2007 Paper

Novel anionic photoacid generator (PAGs) and photoresist for sub-50-nm patterning by EUVL and EBL

Mingxing Wang, Cheng-Tsung Lee, Clifford Henderson, Wang Yueh, Jeanette Roberts, Kenneth Gonsalves

Proceedings Volume 6519, 65191F (2007) https://doi.org/10.1117/12.712143

KEYWORDS: Polymers, Extreme ultraviolet lithography, Line edge roughness, Extreme ultraviolet, Photoresist materials, Electron beam lithography, Lithography, Polymerization, Image processing, Optical lithography

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Proceedings Article | 23 March 2007 Paper

Novel polymeric anionic photo-acid generators (PAGs) and photoresists for sub-100-nm patterning by 193-nm lithography

Mingxing Wang, Nathan Jarnagin, Wang Yueh, Jeanette Roberts, Melina Tapia-Tapia, Nikola Batina, Kenneth Gonsalves

Proceedings Volume 6519, 65192C (2007) https://doi.org/10.1117/12.711477

KEYWORDS: Polymers, Fluorine, Line edge roughness, Lithography, Photoresist materials, Optical lithography, Polymerization, Etching, Resistance, Semiconducting wafers

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Proceedings Article | 23 March 2007 Paper

Photosensitivity and line-edge roughness of novel polymer-bound PAG photoresists

Cheng-Tsung Lee, Mingxing Wang, Nathan Jarnagin, Kenneth Gonsalves, Jeanette Roberts, Wang Yueh, Clifford Henderson

Proceedings Volume 6519, 65191E (2007) https://doi.org/10.1117/12.713369

KEYWORDS: Polymers, Line edge roughness, Lithography, Analog electronics, Diffusion, Image resolution, Polymer thin films, Silicon, Photoresist materials, Semiconducting wafers

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Substantially improved photoresist material designs, which can provide higher photosensitivity and precise critical dimension and edge roughness control, will be required to enable the application of next generation lithography technology to the production of future sub-65 nm node IC device generations. The development and characterization of novel material platforms that solve the aforementioned basic problems with chemically amplified resists (CARs) is essential and is already one of the major subjects of modern lithography research. In that regard, we have pursued development of a variety of 193 nm and EUV CARs that contain photoacid generator (PAG) units covalently bonded directly to the resin polymer backbone. However, the detailed structure-property relationships that result from this direct attachment of the PAG functional group to the polymer have previously not yet been rigorously characterized. In this work, the lithographic properties of a polymer-bound PAG CAR (GBLMA-co-EAMA-co-F4-MBS.TPS) and its blended-PAG analog resist (GBLMA-co-EAMA blend F4-IBBS.TPS) were studied and compared. The direct incorporation of PAG functionality into the resist polymer, where the resulting photoacid remains bound to the polymer, showed improved photosensitivity, resolution, and lower LER as compared with the analogous blended-PAG resist. The improved resolution and LER were expected due to the restricted photoacid diffusion and uniform PAG distribution provided by direct incorporation of the PAG into the polymer backbone to make a single-component resist material. The ability to load higher levels of PAG into the resist provided by this PAG incorporation into the polymer, as compared to the low PAG concentrations attainable by traditional blending approaches, overcomes the sensitivity loss that should result from reduction in photoacid diffusivity and concomitant smaller acid-catalytic chain lengths. In fact, the polymer-bound PAG resist achieves a faster photospeed than the blended-PAG analog material under DUV radiation in the case of the materials reported here while still providing all of the aforementioned improvements such as the improved line edge roughness.

Proceedings Article | 31 March 2006 Paper

Fundamental studies of the properties of photoresists based on resins containing polymer-bound photoacid generators

Cheng-Tsung Lee, Nathan Jarnagin, Mingxing Wang, Kenneth Gonsalves, Jeanette Robert, Wang Yueh, Clifford Henderson

Proceedings Volume 6153, 61532E (2006) https://doi.org/10.1117/12.663410

KEYWORDS: Polymers, Data modeling, Diffusion, Photoresist materials, FT-IR spectroscopy, Statistical modeling, Molecules, Extreme ultraviolet lithography, Polymer thin films, Reflectivity

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Proceedings Article | 29 March 2006 Paper

Resists for sub-100nm patterning at 193nm exposure

N. Jarnagin, K. Gonsalves, M. Wang, J. Roberts, W. Yeuh

Proceedings Volume 6153, 61534P (2006) https://doi.org/10.1117/12.656457

KEYWORDS: Polymers, Polymerization, Scanning electron microscopy, Optical lithography, Line edge roughness, Semiconducting wafers, Chemically amplified resists, Roads, Diffusion, Applied research

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Proceedings Article | 29 March 2006 Paper

Effects of material design on extreme ultraviolet (EUV) resist outgassing

Kim Dean, Kenneth Gonsalves, Muthiah Thiyagarajan

Proceedings Volume 6153, 61531E (2006) https://doi.org/10.1117/12.657163

KEYWORDS: Polymers, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Contamination, Diffusion, EUV optics, Calibration, Line width roughness, Carbon

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Proceedings Article | 4 May 2005 Paper

Newly developed polymer bound photoacid generator resist for sub-100-nm pattern by EUV lithography

Kenneth Gonsalves, Muthiah Thiyagarajan, Kim Dean

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.602087

KEYWORDS: Polymers, Extreme ultraviolet lithography, Lithography, Polymerization, Chemically amplified resists, Resistance, Photomicroscopy, Scanning electron microscopy, Electron beam lithography, Polymethylmethacrylate

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Proceedings Article | 4 May 2005 Paper

Material design and evaluation of nanocomposite resist for next generation lithography

Kenneth Gonsalves, Muthiah Thiyagarajan, Kim Dean, Patricia Santiago, L. Rendon, Augustin Jeyakumar, Clifford Henderson

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.597308

KEYWORDS: Etching, Polymers, Plasma etching, Nanocomposites, Lithography, Plasma, Reactive ion etching, Electron beam lithography, Resistance, Silicon films

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SPIE Journal Paper | 1 April 2005

New resists for nanometer scale patterning by extreme ultraviolet lithography

Kenneth Gonsalves, Muthiah Thiyagarajan, Kim Dean

JM3, Vol. 4, Issue 02, 029701, (April 2005) https://doi.org/10.1117/12.10.1117/1.1898604

KEYWORDS: Polymers, Extreme ultraviolet lithography, Lithography, Optical lithography, Extreme ultraviolet, Photoresist materials, Photomicroscopy, Etching, Resistance, Nanotechnology

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Proceedings Article | 14 May 2004 Paper

BIORESIST: a lithographic approach for the patterning of cells in tissue engineering applications

Wei He, Kenneth Gonsalves, Craig Halberstadt, Yusif Umar, Jae-Hak Choi

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.533367

KEYWORDS: Optical lithography, Lithography, Polymers, Glasses, Tissues, Collagen, Photoresist materials, Ultraviolet radiation, Tissue engineering, Proteins

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Proceedings Article | 12 June 2003 Paper

High-sensitivity nanocomposite resist materials for x-ray and EUV lithography

Mohammad Azam Ali, Kenneth Gonsalves, N. Batina, Victoria Golovkina, Franco Cerrina

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485139

KEYWORDS: Extreme ultraviolet lithography, X-rays, Nanocomposites, X-ray lithography, Lithography, Photoresist materials, Polymers, Scanning electron microscopy, Extreme ultraviolet, Nanotechnology

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Proceedings Article | 12 June 2003 Paper

Nanocomposite resist for low-voltage electron beam lithography (LVEBL)

Mohammad Azam Ali, Kenneth Gonsalves, Ankur Agrawal, Augustin Jeyakumar, Clifford Henderson

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.483740

KEYWORDS: Etching, Electron beam lithography, Electron beams, Polymers, Nanocomposites, Lithography, Resistance, Silicon, Plasma etching, Plasma

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Proceedings Article | 24 August 2001 Paper

New advances in resist system for next-generation lithography

Yongqi Hu, Wei He, Kenneth Gonsalves, Lhadi Merhari

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436811

KEYWORDS: Nanocomposites, Silica, Nanoparticles, Lithography, Monte Carlo methods, Plasma etching, Resistance, Etching, Particles, Electron beam lithography

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Proceedings Article | 24 August 2001 Paper

Novel CA resists with photoacid generator in polymer chain

Hengpeng Wu, Kenneth Gonsalves

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436884

KEYWORDS: Polymers, Lithography, Scanning electron microscopy, Photomicroscopy, Molecules, Deep ultraviolet, Chemically amplified resists, Polymerization, Sodium, Ultraviolet radiation

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Showing 5 of 28 publications

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