Mr. Kazuyuki Hayashi Profile

Kazuyuki Hayashi

at Asahi Glass Co Ltd

SPIE Involvement:

Author

Publications (2)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 30 October 2007 Paper

Development status of EUVL mask blanks in AGC

Kazuyuki Hayashi

Proceedings Volume 6730, 67305D (2007) https://doi.org/10.1117/12.746619

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Reflectivity, Particles, Multilayers, Extreme ultraviolet, Glasses, Ruthenium, Inspection, Materials processing

Read Abstract +

Extreme ultraviolet lithography (EUVL) is a leading candidate for lithographic technology to fabricate the next generation devices with a 32 nm feature size or smaller. The production of the defect-free mask blanks is one of the key technologies to realize the EUVL. The EUV mask blanks requires various kinds of properties such as a low thermal expansion coefficient and an ultra-low flatness of the substrate, a high and uniform reflectivity at EUV wavelength and a ultra-low defectivity down to 30 nm in the reflective multilayer film, and so on. Asahi Glass Company (AGC) has employed its own high quality glass synthetic technology, the glass polishing technology, the glass cleaning technology and film-coating technology acquired for electronic and optical devices to develop the EUV mask blanks. In this paper, we report on the current status of the EUVL mask blank development in AGC. We demonstrated <50 nm flatness on both sides and ~10 defects >60 nm on low thermal expansion material (LTEM) substrate. We also demonstrated a Mo/Si multilayer and a Ru capping layer-coated mask blanks with ~10defects >83 nm and ~65% reflectivity at EUV wavelength. New Ta-based absorber materials and antireflective layers were also developed. Their superior optical properties at the wavelength of the mask pattern inspection light were shown in comparison with the current conventional TaN absorber layer and TaON AR layer. AGC can provide full-stack EUVL mask with this new absorber material for the process developments with the alpha-demo EUV exposure tools.

Proceedings Article | 20 October 2006 Paper

Development of EUVL mask blank in AGC

Takashi Sugiyama, Hiroshi Kojima, Masabumi Ito, Kouji Otsuka, Mika Yokoyama, Masaki Mikami, Kazuyuki Hayashi, Katsuhiro Matsumoto, Shinya Kikugawa

Proceedings Volume 6349, 63492J (2006) https://doi.org/10.1117/12.686618

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Multilayers, Reflectivity, Coating, Extreme ultraviolet, Glasses, Polishing, Particles, Surface roughness

Read Abstract +

Recent rapid progress in the technologies of extreme ultraviolet lithography (EUVL) is ensuring that EUVL will be a primary candidate for the next generation lithography beyond 32-nm node. However, realization of defect-free reflective mask blank is still counted as one of the most critical issues for high volume production in EUVL. Asahi Glass Company (AGC) has developed comprehensive technologies for manufacturing EUVL mask blanks from figuring and polishing glass substrate to cleaning, multilayer coating, and evaluating its performances by making use of our long and wide experience in providing high quality processed glass substrates and coatings for electronic devices. In this paper, we will present the current status of each aspect of EUVL mask blank development in AGC toward the specifications required for high volume production. In the effort to meet the specifications, we have introduced a number of key technologies that can be divided into three regions, which are materials, glass processings, and evaluations. We have developed state-of-the-art processes and tools for manufacturing EUV mask blanks, such as a new polishing technique for extremely flat substrate, a new cleaning recipe and tool for low-defect substrate, and a newly developed deposition tool for ultra-low defect and higher EUV reflective coating with our new optical thin film materials for multilayer coating. Furthermore, in order to clarify their performances, we also introduced a wide variety of evaluation techniques such as flatness and roughness measurement of substrate, a defect inspection, and EUV reflectometry as well as defect analysis techniques which help us eliminate printable defects in EUVL mask blanks.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years