Colloidal quantum dots (CQDs) have been widely applied in the design and development of optoelectronic devices due to their controllable size, tunable band gap and inexpensive low temperature solution processing etc. However, the preparation method of quantum dots film is a critical part of the preparation process of optoelectronic devices, which can restrict the application of CQDs in optoelectronic devices. In this paper, different preparation technologies of CQDs film are summarized. The advantages and disadvantages of different preparation technologies of CQDs film are discussed to suggest suitable options for different CQDs film based optoelectronic devices.
Herein, SnSe2 QDs have successfully been prepared by liquid-phase ultrasonic exfoliation of the group IV metal-sulfide compounds. The morphology and structure of the SnSe2 QDs were characterized by transmission electron microscopy (TEM) and high-resolution transmission microscopy (HR-TEM), and the composition of the materials was analyzed by X-ray diffraction (XRD) and Raman spectroscopy (Raman). The absorbance of the samples with different wavelengths was analyzed by UV-Vis spectrophotometer, and the fluorescence intensity at different excitation wavelengths was studied by fluorescence spectrometer (PL), and the effect of different centrifugal speeds on the particle size of QDs and the spectral red-shift caused by the size effect was investigated. The average lateral sizes of SnSe2 QDs samples obtained at centrifugal speeds of 3500, 1500 and 500 rpm were 1.86 nm, 2.73 nm, and 3.3 nm, respectively. The SnSe2 QDs exhibited significant absorption in the infrared band and red-shift with increasing QDs size, The results demonstrated the potential use of this new material in infrared detection.
As a topological crystal insulator, tin telluride (SnTe) has unique properties that are different from those of traditional topological insulators. Due to its helical multi-surface states, strong topological protection characteristics, gapless topological surface states, narrow bulk band gap, high mobility at room temperature and other excellent properties, SnTe has a great application potential in photodetectors with minimal energy consumption, broad spectrum and ultra-fast response. However, the preparation of large area high quality SnTe nanofilms is still a big challenge. Here, we report a facile and efficient preparation method for large area SnTe nanofilm (2 cm ×2 cm) by RF magnetron sputtering method. The nanofilm having a thickness of 5.8 nm and surface roughness of 0.51 nm was obtained. Moreover, the prepared nanofilm was crystallized without annealing treatment and exhibited uniform surface. The photoconductive prototype device based on the SnTe nanofilm demonstrated a significant photoelectric response under an illumination of 365, 555 and 850 nm light source at room temperature. Furthermore, the ultraviolet, visible and near infrared photoelectric performance of the device remained stable even after six months in the atmosphere of the drying cabinet. These results indicate that the SnTe nanofilm has potential applications in broad spectrum photodetectors.
Ultraviolet (UV) photodetector has been widely used in astronomical observation, missile warning, optical communication, flame and environmental detections and so on. Herein, recent research progress on UV focal plane detectors is summarized, including commonly used materials in this field. Furthermore, commercially available UV focal plane detectors, and its structure and performance are also discussed. Finally, the practical problems limiting the further development and application of UV focal plane detectors are summarized and discussed in this paper.
Silicon has been widely used in the field of low-cost photodetectors. However, the use of traditional silicon material for high performance infrared detectors is hindered by its indirect band gap. Recently, black silicon has attracted the attention of researchers working on optoelectronics as it can be considered a new type of material with high absorption, and expansion of the response band can be achieved by supersaturated doping. Importantly the material is compatible with the silicon process. With the development of science and technology, the application of photodetectors can have a great impact on our lives, so the research on black silicon photodetectors is also becoming popular. Up to now, significant progress has been made in the development of black silicon photodetectors. This paper summarizes the preparation of black silicon materials and the application prospect of black silicon photodetectors.
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