Hygroscopic insulator field effect transistors (HIFETs) are a unique class of OTFTs with low-voltage operation and a simple, solution processable, and solid-state structure. Sensitivity to various analytes can be achieved by modification of the gate electrode, but device performance is often degraded by the change in electrical characteristics. We have studied the effect of gate conductance on HIFET performance. As gate conductance increases, key figures of merit improve until plateauing. We propose this is due to the dependence of the effective gate voltage on its resistance when a leakage current is present. These results are widely applicable for device optimisation.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.