Dr. Jose M. Pozo Profile

Dr. Jose M. Pozo

Chief Technology Officer

SPIE Involvement:

Author

Proceedings Article | 8 March 2014 Paper

Sensing platform based on micro-ring resonator and on-chip reference sensors in SOI

S. M. Abdulla, B. De Boer, J. Pozo, J. van den Berg, A. Abutan, R. A. Hagen, D. M. LoCascio, P. Harmsma

Proceedings Volume 8990, 89900W (2014) https://doi.org/10.1117/12.2039896

KEYWORDS: Silica, Sensors, Resonators, Water, Temperature metrology, Interferometers, Environmental sensing, Free space optics, Coating, Etching

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Proceedings Article | 22 May 2013 Paper

ePIXfab: the silicon photonics platform

Amit Khanna, Youssef Drissi, Pieter Dumon, Roel Baets, Philippe Absil, J. Pozo, D. M. Lo Cascio, M. Fournier, J-M. Fédéli, L. Fulbert, L. Zimmermann, B. Tillack, T. Aalto, P. O'Brien, D. Deptuck, J. Xu, D. Gale

Proceedings Volume 8767, 87670H (2013) https://doi.org/10.1117/12.2020576

KEYWORDS: Silicon photonics, Computer aided design, Packaging, Photonics, Standards development, Device simulation, Prototyping, Microsystems, Semiconducting wafers, Etching

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Proceedings Article | 5 June 2010 Paper

Four-input NOR gate using cross gain modulation in a single Semiconductor Optical Amplifier

Miguel Cabezón, Asier Villafranca, Juan José Martínez, David Izquierdo, Ignacio Garcés, José Pozo

Proceedings Volume 7728, 77281I (2010) https://doi.org/10.1117/12.853835

KEYWORDS: Modulation, Logic, Logic devices, Semiconductor optical amplifiers, Eye, Optical filters, Nonlinear optics, Optical amplifiers, Clocks, Wavelength division multiplexing

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Proceedings Article | 28 April 2010 Paper

Fast integrated discretely tunable laser using filtered feedback for packet switching and access network applications

J. Pozo, B. Docter, O. Raz, N. Calabretta, S. Beri, I. Ermakov, J. Danckaert, M. Smit

Proceedings Volume 7720, 77201K (2010) https://doi.org/10.1117/12.854634

KEYWORDS: Tunable lasers, Optical filters, Switching, Tunable filters, Mirrors, Switches, Networks, Packet switching, Laser resonators, Control systems

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Proceedings Article | 8 May 2008 Paper

Fabrication and characterization of GaInNAs/GaAs semiconductor optical amplifiers

J. Pozo, N. Vogiatzis, O. Ansell, P. Heard, J. Rorison, P. Tuomisto, J. Konttinen, M. Saarinen, C. Peng, J. Viheriälä, T. Leinonen, M. Pessa

Proceedings Volume 6997, 69970C (2008) https://doi.org/10.1117/12.781283

KEYWORDS: Etching, Ion beams, Semiconductor optical amplifiers, Photonic integrated circuits, Coarse wavelength division multiplexing, Quantum wells, Semiconductor lasers, Temperature metrology, Tunable lasers, Iodine

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Proceedings Article | 14 April 2006 Paper

Improvements in GaInNAs/GaAs quantum-well lasers using focused ion beam post-processing

J. Pozo, J. Hu, J. Rorison, M. Saarinen, J. Konttinen, J. Viheriälä, P. Leinonen, T. Jouhti, M. Pessa

Proceedings Volume 6184, 61840B (2006) https://doi.org/10.1117/12.663325

KEYWORDS: Modulation, Ion beams, Waveguides, Temperature metrology, Quantum wells, Semiconductor lasers, Optical design, Laser processing, Metals, Waveguide lasers

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Proceedings Article | 7 July 2005 Paper

Investigation on the high speed modulation in (GaIn)(NAs)/GaAs lasers

J. Pozo, Y. Qiu, P. Ivanov, P. Yu, J. Rorison, M. Saarinen, J. Konttinen, T. Jouhti, M. Pessa

Proceedings Volume 5840, (2005) https://doi.org/10.1117/12.619150

KEYWORDS: Modulation, Temperature metrology, Semiconductor lasers, Quantum wells, Nitrogen, Laser damage threshold, Eye, Fabry–Perot interferometers, Gallium arsenide, Refractive index

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Proceedings Article | 1 September 2004 Paper

Investigation of optical gain and L-I characteristics in (GaIn)(NAs)/GaAs lasers

Jose Pozo, T. Houle, Judy Rorison, T. Jouhti, Markus Pessa

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.546474

KEYWORDS: Temperature metrology, Quantum wells, Vertical cavity surface emitting lasers, Nitrogen, Semiconductor lasers, Pulsed laser operation, Indium gallium arsenide, Laser marking, Telecommunications, Laser optics

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GaInNAs quantum well lasers have attracted significant interest in recent years. Their potential for operation at high temperatures without coolers and their application for low cost vertical-cavity surface-emitting lasers (VCSELs) are the main reasons for this interest. The main consequence of adding Nitrogen (N) to InGaAs materials is the band gap shrinkage. The reason for that is the interaction of N (acting as a localized defect) with the conduction band of the InGaAs. In previous studies, low temperature PL measurements of the impact of Nitrogen on the band structure of GaIn NAs have been examined. Pulsed measurements using a broad area GaInNAs QW laser were carried out and the results were analyzed in terms of the interaction of the N defect state with the GaInAs conduction band edge (band-anticrossing model). A detailed experimental temperature study of single quantum-well GaInNAs lasers at room temperature and above has been carried out. Experimental results of L-I, T₀, temperature dependence of lasing wavelength, optical gain and efficiencies are presented, discussed and compared with other materials. The temperature ranges studied is appropriate for most network applications. The gain spectra for moderate densities were experimentally measured using the method of Hakki and Paoli: the 600 μm long devise is biased below threshold and the gain is evaluated form the Fabry Perot modulation of the spontaneous emission spectra. A new concept will be introduced to study the bandwidth of the spectral gain and see its dependence with the temperature. The half-peak-BW will be the bandwidth where the gain decreases 50% from the peak gain. The temperature performance of the half-peak-BW has been studied obtaining a slope of 0.5871 nm/K. About the temperature dependence of the laser, a value of T_o (50 K) similar than the one found in InGaAsP has been found. This might disagree with the first results published of this new material system, giving extremely high values above 100 K. This is due to the high A parameter found in the previous materials. The improvement of the material is decreasing the A parameter and the characteristic temperature of the device. A small temperature dependence of the lasing wavelength was found (0.37 nm/K). This value was confirmed measuring the temperature dependence of the gain peak wavelength. This small temperature dependence can be understood by the interaction of the N state with the conduction band edge.

Showing 5 of 8 publications

Conference Committee Involvement (2)

Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS, Nanodevices, and Nanomaterials XIII

3 February 2014 | San Francisco, California, United States

Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII

4 February 2013 | San Francisco, California, United States

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