Light absorption in graphene causes a significant change in electron temperature due to the low electronic heat capacity and weak electron-phonon coupling. This property makes graphene a beautiful material for hot-electron bolometers (HEB). However, along with the above advantages, a major challenge remains that, with weak electron-phonon scattering, the resistance is only weakly temperature dependent for pristine graphene. It is thus challenging to measure the electron temperature change due to incoming radiation power. In addition, thermally isolating graphene in order to achieve the small electron-phonon thermal conductance is difficult. To overcome this issue, stronger temperature dependence has been obtained either by using dual-gated bilayer graphene to create a tunable bandgap or by introducing defects to induce strong localization. Both schemes have successfully produced bolometric detection, with responsivities up to 2×105 V W−1 and a temperature coefficient for the resistance as high as 22 kΩ K−1 at 1.5 K. Here we use graphene quantum dots, where a bandgap is induced via quantum confinement and the graphene quantum dots device exhibits an extraordinarily high variation of resistance with temperature (higher than 430 MΩ K−1), leading to responsivities of 1 × 1010 V W−1.
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