A theoretical model of the high-frequency electrical conductivity of a semiconductor nanolayer is constructed within the framework of the quantum theory of transport phenomena. The layer thickness can be comparable to and less than the de Broglie wavelength of charge carriers. The isoenergy surface has the shape of an ellipsoid of revolution, the main axis of which is parallel to the layer plane. Analytical expressions are derived for the conductivity tensor components as a function of dimensionless thickness, electric field frequency, chemical potential, ellipticity parameter, and surface roughness parameters. The dependences of the longitudinal and transverse conductivity tensor components on the above parameters are analyzed. The results are compared for the cases of a degenerate and non-degenerate electron gas. A comparative analysis of theoretical calculations with known experimental data for a silicon film is performed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.