In this work, we demonstrate a high-performance ultraviolet phototransistor (UVPT) based on the AlGaN/GaN high-electron-mobility transistor (HEMT) configuration. When the device is biased at off state, the peak photoresponsivity of 3.6×107 A/W under 265nm illumination and 1.0×106 A/W under 365nm illumination can be obtained. Those two responsivity values have achieved the highest among the reported UVPTs at the same detection wavelength under off-state conditions. Furthermore, we observed a distinct difference between the rise time and decay time of the device under 265 nm and 365 nm light illumination which can be attributed to the unique device operating principle of the constructed AlGaN/GaN-based UVPT structure with different absorption mechanisms in the device.
A deep ultraviolet LED structure with a double-side step n-AlGaN inserted layer was constructed to alleviate the electron leakage and improve confinement capability of holes, thus enhancing the optical power and the internal quantum efficiency.
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