We will present efficient semi-transparent bulk-heterojunction [regioregular of poly(3-hexylthiophene):
(6,6)-phenyl C61 butyric acid methyl ester] solar cells with an inverted device architecture. Highly transparent ZnO
and TiO2 films prepared by Atomic Layer Deposition are used as cathode interlayers on top of ITO. The topanode
consists of a RF-sputtered ITO layer. To avoid damage due to the plasma deposition of this layer, a
sputtering buffer layer of MoO3 is used as protection. This concept allows for devices with a transmissivity
higher than 60 % for wavelengths 650 nm. The thickness of the MoO3 buffer has been varied in order to
study its effect on the electrical properties of the solar cell and its ability to prevent possible damage to the
organic active layers upon ITO deposition. Without this buffer or for thin buffers it has been found that device
performance is very poor concerning the leakage current, the fill factor, the short circuit current and the power
conversion efficiencies. As a reference inverted solar cells with a metal electrode (Al) instead of the ITO-top
contact are used. The variation between the PCE of top versus conventional illumination of the semi-transparent
cells was also examined and will be interpreted in view of the results of the optical simulation of the dielectric
device stack with and without reflection top electrode. Power conversion efficiencies of 2-3 % for the opaque
inverted solar cells and 1.5-2.5 % for the semi-transparent devices were obtained under an AM1.5G illumination.
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