In this paper we present a 2D analytical model for the potential and the electric eld in bottom-contact organic eld-e ect transistors (OFETs) and an approach for calculation of the tunneling and thermionic source and drain injection current. The electrostatics are analytically calculated by solving the Poisson equation via the conformal mapping technique, based on that the currents were computed. Typical OFET behaviors like nonlinear injection and s-like shape are clearly visible. The model is compared with devices simulated by TCAD Sentaurus for various geometrical parameters.
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