The crystallization properties of as-deposited amorphous AgInSbTe thin films irradiated by single-shot picosecond laser pulses were studied using in-situ transient optical reflectance and electrical resistance measurements with nanosecond resolution. It was found that the real-time optical and electrical signal responses were different under the same pumping conditions. The optical signals showed a multistage crystallization process with a total time of approximately 150 ns, while the electrical signals showed a negative exponential trend decreasing to the final stable state within about several microseconds. A resistor–capacitor model was constructed to explain this delayed electrical response. The fluencedependent evolution dynamics maybe implied a non-fully crystallization process under ultra-short pulse stimulation.
Phase transition kinetics of Sb2Te3 phase change thin films was investigated in this paper. Sb2Te3 thin films, with
thickness of ~100nm, were deposited on K9 glass substrates by DC magnetron sputtering with an alloy target. The
crystallization kinetics of Sb2Te3 thin films under isothermal and non-isothermal annealing was analyzed by a
home-made in situ temperature-dependent reflectivity tester. From the heating rate dependences of phase transition
temperatures, the activation energy was derived. The obtained values of the Avrami indexes indicate that a two
dimension growth crystallization mechanism is responsible for the amorphous-crystalline transformation of Sb2Te3
phase change thin films. Although phase transition of Sb2Te3 thin film is confirmed to be continuous in a larger
temperature range, but short laser pulse can easily trigger its crystallization process and form clear and confined
crystalline marks.
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