Dr. Dongyoung Kim
Part-Qualified Patent Attorney
SPIE Involvement:
Author
Area of Expertise:
Intermediate band solar cells , Photovoltaics , III-V quantum dots , III-V nanowires
Profile Summary

Dongyoung Kim was born in Daegu, South Korea. He received the M.Eng. degree in electronic and electrical engineering from University College London, London, U.K., in 2013, where he is currently working toward the Ph.D. degree with the Molecular Beam Epitaxy Research Group. His current research interests include III–V quantum-dot solar cells and nanowires.
Publications (3)

Proceedings Article | 23 February 2017 Presentation + Paper
Dongyoung Kim, Mingchu Tang, Jiang Wu, Sabina Hatch, Yurii Maidaniuk, Vitaliy Dorogan, Yuriy Mazur, Gregory Salamo, Huiyun Liu
Proceedings Volume 10099, 100990H (2017) https://doi.org/10.1117/12.2250328
KEYWORDS: Silicon, Doping, Solar cells, Absorption, Molecular beam epitaxy, Quantum dots, Indium arsenide, Gallium arsenide, Chlorine, External quantum efficiency, Gallium

Proceedings Article | 20 February 2017 Presentation + Paper
Yunyan Zhang, Ana Sanchez, Martin Aagesen, Yue Sun, Jiang Wu, Dongyoung Kim, Pamela Jurczak, Suguo Huo, Xiulai Xu, Huiyun Liu
Proceedings Volume 10114, 101140K (2017) https://doi.org/10.1117/12.2249878
KEYWORDS: Nanowires, Silicon, Crystals, Gallium arsenide, Gallium, Scanning electron microscopy, Thin films, Photonic crystal devices, Photonic crystals, Arsenic

Proceedings Article | 15 March 2016 Paper
Yunyan Zhang, Martin Aagesen, Ana Sanchez, Jiang Wu, Richard Beanland, Thomas Ward, Dongyoung Kim, Pamela Jurczak, Suguo Huo, Huiyun Liu
Proceedings Volume 9758, 97580E (2016) https://doi.org/10.1117/12.2210983
KEYWORDS: Nanowires, Arsenic, Thin film growth, Silicon, Crystals, Chemical elements, Luminescence, Structural design, Solar cells, Water splitting, Photovoltaics, Gallium, Scanning electron microscopy, Zinc, Transmission electron microscopy, Molecular beam epitaxy, Visible radiation

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