We report a maskless reactive ion etching (RIE) method that employs O2, CHF3 and SF6&O2 gas plasma sequentially to generate nano-cones structures on silicon substrates with good uniformity. In this method, nano-cones are made under carefully-controlled conditions that restrict their width and height to 60 nm and 82 nm, respectively. According to the formation trend of nano-cones under different plasma conditions, the contributing mechanism is discussed. With the multiple effects of etching time, chamber pressure and self-bias voltage, the height, angle and density of nano-cones will be varied within a certain range. Given these variations, a nano-cone structure with good uniformity was generated using the following parameters: etching time of 300 s, chamber pressure of 40 mtorr, self-bias voltage of 75 W, and a SF6&O2 flow ratio of 75 sccm: 75 sccm. The experiment in this report demonstrates a promising way to fabricate silicon-based nano-cone structures for photonic and optoelectronic applications, with advantages of the controllability and compatibility of its dry-etching process.
Electron channeling contrast imaging (ECCI), as a rapid and convenient technique, has been widely used to characterize dislocations of heteroepitaxial III-V materials in recent years. The previous ECCI measurements, however, were primarily based on plan-view ones. In this work, we demonstrate an experimental observation of the cross sectional ECCI measurement on a Si-based GaAs sample for the first time. The plan view ECCI image can provide information on threading dislocations, stacking faults, as well as the dislocation distribution. By investigating the relationship between the defect contrast and the corresponding accelerating voltage, the optimal range of beam voltages for cross-sectional ECCI measurement is 10 kV-15 kV. The cross-sectional ECCI can simplify the process of characterizing dislocations in Si-based III-V materials.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.