Fullerene-based spin-on-carbon enables very high carbon content, and shows very high thermal stability, and etch resistance approaching amorphous carbon. Here we describe the performance of the HM1300 fullerene SOC, including results using high temperature inert atmosphere curing. Ohnishi numbers below 1.44 are achieved (measured by elemental analysis) and etch performance improved over the standard bake. A new high carbon crosslinker, designed to link directly to the fullerene cage, and with a carbon content comparable to the fullerene (significantly higher than the previous crosslinker) is also introduced. The new crosslinker is designed to enhance both etch and thermal stability performance.
Irresistible Materials has previously introduced the HM340 series of fullerene based spin-on carbon hardmasks, and reported on material characterization, including very high carbon content and high thermal stability. The materials have a low Ohnishi number providing high etch durability and the low hydrogen level allows for high resolution etching without wiggling. In order to further increase semiconductor facilities (Fab) compatibility, thermal stability and etch resistance several new formulations are under development. Here we present the latest results for our new HM1360 series, avoiding the drain test issues encountered with higher concentration HM340 formulations, together with new and updated characterisation results for the more advanced formulations.
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