Prof. Arvydas Matulionis Profile

Prof. Arvydas Matulionis

at Ctr for Physical Sciences & Technology

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 5 March 2021 Presentation

DC and microwave performance of BeMgZnO/ZnO heterostructure field effect transistors

Kai Ding, Vitaliy Avrutin, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç, Emilis Šermukšnis, Arvydas Matulionis

Proceedings Volume 11687, 116871D (2021) https://doi.org/10.1117/12.2586813

KEYWORDS: Heterojunctions, Field effect transistors, Microwave radiation, Zinc oxide, Sapphire, Plasmons, Fourier transforms, Dielectrics

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Proceedings Article | 1 March 2019 Presentation + Paper

Electrical properties of BeMgZnO/ZnO heterostructures with high-density two-dimensional electron gas

K. Ding, V. Avrutin, N. Izyumskaya, Ü. Özgür, H. Morkoç, E. Šermukšnis, A. Matulionis

Proceedings Volume 10919, 1091917 (2019) https://doi.org/10.1117/12.2511644

KEYWORDS: Heterojunctions, Magnesium, Beryllium, Zinc oxide, Phonons, Zinc, Profiling, Interfaces, Gallium nitride, Oxygen

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Proceedings Article | 8 March 2014 Paper

Effect of electron density on cutoff frequency of III-N HFETs

Arvydas Matulionis, Hadis Morkoç

Proceedings Volume 8986, 89861D (2014) https://doi.org/10.1117/12.2036914

KEYWORDS: Phonons, Gallium nitride, Ultrafast phenomena, Heterojunctions, Scattering, Acoustics, Transistors, Plasmons, Capacitance, Reliability

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Proceedings Article | 28 February 2012 Paper

Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot-phonon effects

Cemil Kayis, R. Ferreyra, Congyong Zhu, Mo Wu, X. Li, Ü. Özgür, A. Matulionis, H. Morkoç

Proceedings Volume 8262, 82621W (2012) https://doi.org/10.1117/12.908501

KEYWORDS: Phonons, Gallium nitride, Heterojunctions, Transistors, Semiconducting wafers, Phase measurement, Ultrafast phenomena, Astatine, Molybdenum, Ultrafast measurement systems

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Proceedings Article | 10 February 2012 Paper

The impact of active layer design on quantum efficiency of InGaN light emitting diodes

F. Zhang, X. Li, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, S. Hong, S. Yen, T. Hsu, A. Matulionis

Proceedings Volume 8262, 82621G (2012) https://doi.org/10.1117/12.903931

KEYWORDS: Light emitting diodes, External quantum efficiency, Indium gallium nitride, Quantum efficiency, Quantum wells, Lithium, Gallium, Electroluminescence, Gallium nitride, Nickel

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Proceedings Article | 4 March 2011 Paper

Impact of ballistic electron transport on efficiency of InGaN based LEDs

F. Zhang, X. Li, S. Liu, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, M. Kisin

Proceedings Volume 7939, 793917 (2011) https://doi.org/10.1117/12.875806

KEYWORDS: Light emitting diodes, Electron beam lithography, External quantum efficiency, Indium gallium nitride, Electron transport, Aluminum, Electroluminescence, Gallium nitride, Polarization, Phonons

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Proceedings Article | 4 March 2011 Paper

Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channels

J. Leach, M. Wu, H. Morkoç, M. Ramonas, A. Matulionis

Proceedings Volume 7939, 79391P (2011) https://doi.org/10.1117/12.877717

KEYWORDS: Phonons, Electrons, Gallium nitride, Heterojunctions, Plasmons, Reliability, Scattering, Picosecond phenomena, Field effect transistors, Channel projecting optics

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Proceedings Article | 11 March 2010 Paper

Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels

Arvydas Matulionis, Juozapas Liberis, Hadis Morkoç

Proceedings Volume 7602, 76020H (2010) https://doi.org/10.1117/12.843659

KEYWORDS: Electrons, Phonons, Gallium nitride, Heterojunctions, Acoustics, Raman spectroscopy, Picosecond phenomena, Indium gallium arsenide, Solids, Microwave radiation

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Proceedings Article | 19 February 2009 Paper

Hot phonons in InAlN/AlN/GaN heterostructure 2DEG channels

Arvydas Matulionis, Hadis Morkoç

Proceedings Volume 7216, 721608 (2009) https://doi.org/10.1117/12.802341

KEYWORDS: Phonons, Gallium nitride, Solids, Picosecond phenomena, Temperature metrology, Monte Carlo methods, Tellurium, Heterojunctions, Microwave radiation, Scattering

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Proceedings Article | 8 February 2007 Paper

Accumulation of hot phonons in GaN and related structures

Arvydas Matulionis, Ilona Matulionien?

Proceedings Volume 6473, 64730P (2007) https://doi.org/10.1117/12.703451

KEYWORDS: Electrons, Phonons, Gallium nitride, Microwave radiation, Monte Carlo methods, Scattering, Heterojunctions, Solids, Acoustics, Stars

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Proceedings Article | 12 May 2003 Paper

Fast and ultrafast dissipation and fluctuations in two-dimensional channels for nitride and arsenide FETs

Arvydas Matulionis

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.488759

KEYWORDS: Phonons, Aluminum, Microwave radiation, Picosecond phenomena, Solids, Heterojunctions, Temperature metrology, Gallium, Gallium nitride, Ultrafast phenomena

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Showing 5 of 11 publications

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