Dr. Ansgar Laubsch
at ams-OSRAM International GmbH
SPIE Involvement:
Author
Publications (4)

Proceedings Article | 8 May 2008 Paper
Proceedings Volume 6997, 699708 (2008) https://doi.org/10.1117/12.781277
KEYWORDS: Silicon carbide, Gallium nitride, Semiconductor lasers, Laser damage threshold, Quantum wells, Optical simulations, Waveguides, Electroluminescence, Indium gallium nitride, Aluminum

Proceedings Article | 8 May 2008 Paper
Proceedings Volume 6997, 69971U (2008) https://doi.org/10.1117/12.781314
KEYWORDS: Waveguides, Refractive index, Semiconductor lasers, Temperature metrology, Modes of laser operation, Near field optics, Near field scanning optical microscopy, Optical simulations, Thermal effects, Superposition

Proceedings Article | 13 February 2007 Paper
A. Laubsch, M. Sabathil, G. Bruederl, J. Wagner, M. Strassburg, E. Baur, H. Braun, U. Schwarz, A. Lell, S. Lutgen, N. Linder, R. Oberschmid, B. Hahn
Proceedings Volume 6486, 64860J (2007) https://doi.org/10.1117/12.700829
KEYWORDS: Quantum wells, Gallium nitride, Indium gallium nitride, Temperature metrology, Doping, Light emitting diodes, Luminescence, Internal quantum efficiency, Electron holes, Magnesium

Proceedings Article | 13 February 2007 Paper
Proceedings Volume 6486, 64860V (2007) https://doi.org/10.1117/12.700461
KEYWORDS: Quantum wells, Indium gallium nitride, Electrons, Electroluminescence, Light emitting diodes, Doping, Luminescence, Absorption, Indium, Data modeling

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