KEYWORDS: Copper indium gallium selenide, Tandem solar cells, Solar cells, Multijunction solar cells, Gallium arsenide, Germanium, Crystals, Single crystal X-ray diffraction, Silicon, X-ray diffraction
We propose to explore tandem junctions associating single crystalline silicon bottom cell (bandgap of 1.12 eV) and CIGS top cell (bandgap of 1.7 eV), and using wide bandgap GaP intermediate layers. Our purpose is to grow CIGS films under epitaxial conditions on GaP to improve the CIGS top cell efficiency, thanks to a reduction of the structural defects density detrimental for the cell performance, so that CIGS-Si tandem solar cells can emerge as cost competitive for the next generation of PV modules. Epitaxy of CIGS on GaP/Si platform is demonstrated and preliminary results on CIGS cell on GaP/Si is reported.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.