Erbium doped BaTiO3 thin films for optical waveguide applications were investigated. Characteristic 4f emission at 1560 nm is observed for Er concentrations ranging from 1018 to 1020 cm-3. Factors which determined the luminescence efficiency were investigated and a model for efficiency was developed. The luminescence intensity depended predominantly upon two factors: the concentration of radiative Er centers and the de-excitation efficiency of the excited 4f electron state. At a growth temperature of 725 degree(s)C, the concentration of radiative Er ions was independent of Er dopant concentration. Annealing the thin films in an oxidizing ambient resulted in increased luminescence efficiency whereas annealing under reducing conditions quenched the luminescence.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.